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quality 100V N Channel MOSFET 33A Continuous Current 70W Power Dissipation ASDsemi ASDM540G R Package TO 263 factory
quality 100V N Channel MOSFET 33A Continuous Current 70W Power Dissipation ASDsemi ASDM540G R Package TO 263 factory

100V N Channel MOSFET 33A Continuous Current 70W Power Dissipation ASDsemi ASDM540G R Package TO 263

Key Attributes
Model Number: ASDM540G-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
195pF
Number:
1 N-channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
2.3nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
ASDM540G-R
Package:
TO-263
Product Description

Product Overview

The ASDM540G is a 100V N-Channel MOSFET designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for lower RDS(on), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The package is optimized for excellent heat dissipation.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Model: ASDM540G
  • Type: N-Channel MOSFET
  • Voltage Rating: 100V
  • Package: TO-263

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 33 A
Drain Current-Pulsed IDM (Note 1) 132 A
Maximum Power Dissipation PD (Tc=25) 70 W
Single pulse avalanche energy EAS (Note 2) 96 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12A (Note 3) 31 35 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=12A (Note 3) 33 45 m
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 100 - - V
Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 1.6 2.4 V
Forward Transconductance gFS VDS=5V,ID=15A - 11 - S
Input Capacitance Clss VDS=25V,VGS=0V, f=1.0MHz - 2300 - pF
Output Capacitance Coss - 215 - pF
Reverse Transfer Capacitance Crss - 195 - pF
Turn-on Delay Time td(on) VDD=50V, ID=20A, VGS=10V,RGEN=10 - 29 - nS
Turn-on Rise Time tr - 13 - nS
Turn-Off Delay Time td(off) - 58.2 - nS
Turn-Off Fall Time tf - 13.4 - nS
Total Gate Charge Qg VDS=80V,ID=20A VGS=10V - 55 - nC
Gate-Source Charge Qgs - 15 - nC
Gate-Drain Charge Qg - 20 - nC
Diode Forward Voltage VSD VGS=0V,IS=20A - - 1.2 V
Reverse Recovery Time Trr Tj=25IF=10Adi/dt=100A/uS note3 - 58 - nS
Reverse Recovery Charge Qrr - 110 - nC
Thermal Resistance,Junction-to-Case RJC - 1.15 - /W
Thermal Resistance,Junction-to-Ambient(PCB mount) RJA - 40 - /W

Notes:

  • 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • 2. EAS condition :T j=25,VDD=50V,VGS=10V,L=0.5mH,Rg=25
  • 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • 4. Guaranteed by design, not subject to production.

Ordering Information:

Device No. Marking Package Packing Quantity
ASDM540G-R 540 TO-263 Tape&Reel 800/Reel

2410121455_ASDsemi-ASDM540G-R_C2972860.pdf
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