N Channel Enhancement Mode MOSFET ANHI ASW60R150E for in LED Lighting and Telecom Power Systems
Key Attributes
Model Number:
ASW60R150E
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
28A
RDS(on):
120mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Input Capacitance(Ciss):
2.389nF
Pd - Power Dissipation:
195W
Gate Charge(Qg):
47.59nC
Mfr. Part #:
ASW60R150E
Package:
TO-247
Product Description
N-Channel MOSFET
Product Overview
The ASA60R150E and ASW60R150E are Silicon N-Channel MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and are easy to control via the gate. They are ideal for use as Boost PFC switches and in various half-bridge and asymmetric half-bridge topologies. Applications include PC power supplies, adapters, LCD & PDP TVs, telecom power systems, UPS, LED lighting, and server power supplies.
Product Attributes
- Brand: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Packaging: TO220F, TO247
Technical Specifications
| Model | Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Vth (V) |
|---|---|---|---|---|---|---|---|
| MOSFET | ASA60R150E | TO220F | 650 | 150 | 47.59 | 84 | 2.8 to 4.2 |
| MOSFET | ASW60R150E | TO247 | 650 | 150 | 47.59 | 84 | 2.8 to 4.2 |
Key Performance Parameters
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.12 - 0.15 | VGS=10V, ID=10A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 5.8 - | f=1MHz, open drain | |
| Input capacitance | Ciss | - 2389 - | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 218 - | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.07 - | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.4 - | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Rise time | tr | - 21.6 - | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Turn-off delay time | td(off) | - 50 - | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Fall time | tf | - 18.4 - | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Gate to source charge | Qgs | - 8.522 - | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 8.297 - | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate charge total | Qg | - 47.59 - | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.4 - | V | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.7 - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 288 - | ns | VR=400V, IF=11.3 A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 4.3 - | uC | VR=400V, IF=11.3 A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 26.2 - | A | VR=400V, IF=11.3 A,diF/dt=100A/s |
Maximum Ratings
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | - 28 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 84 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 898 | mJ | - |
| MOSFET dv/dt ruggedness | dv/dt | - 130 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 34 | W | TC=25C |
| Power dissipation (TO247) | Ptot | - 195 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
Thermal Characteristics
TO220F Package
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 3.65 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
TO247 Package
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 0.64 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2410121550_ANHI-ASW60R150E_C5440037.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
