Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications
Key Attributes
Model Number:
ASD65R350E
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
350mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
-
Mfr. Part #:
ASD65R350E
Package:
TO-252
Product Description
Product Overview
The ASA MO 1. 2. 3. A65R350 OSFET is a N-Channel MOSFET designed for Power Factor Correction (PFC) and hard switching applications. It is suitable for use in PC power supplies, LCD Adaptors, lighting, servers, and telecom power applications. Key features include low drain-source on-resistance and easy gate switching control. This device offers enhanced performance in hard switching and resonant mode applications.
Product Attributes
- Brand: ASA
- Series: MO 1. 2. 3. A65R350
- Channel Type: N-Channel
- Technology: Silic Applicatio
Technical Specifications
| Part Name | Package | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse | Body diode | dv/dt | Vt | Marking |
|---|---|---|---|---|---|---|---|---|---|
| ASA65R350E | TO220F | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASA65R350E |
| ASU65R350E | TO251 | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASU65R350E |
| ASD65R350E | TO252 | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASD65R350E |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.318 - 0.35 | VGS=10V, ID=5.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 11 | - | f=1MHz, open drain |
| Input capacitance | Ciss | 901 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 59 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 5.3 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 27 | ns | VDD=400V, ID=5.6A,RG=10 |
| Rise time | tr | 31 | ns | VDD=400V, ID=5.6A,RG=10 |
| Turn-off delay time | td(off) | 41 | ns | VDD=400V, ID=5.6A,RG=10 |
| Fall time | tf | 29 | ns | VDD=400V, ID=5.6A,RG=10 |
| Gate to source charge | Qgs | 5.8 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate to drain charge | Qgd | 17 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate charge total | Qg | 22 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate plateau voltage | Vplateau | 5.3 | V | VDD=400V, ID=5.6A, VGS=13V |
| Diode forward voltage | VSD | 0.74 | V | VGS=0V, IF=1 A, Tj=25C |
| Reverse recovery time | trr | 250 | ns | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2572 | nC | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 19.6 | A | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Continuous drain current | ID | - 11 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 55 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 624 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 11 | V/ns | VDS=0...150V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 31 | W | TC=25C |
| Power dissipation (TO251,TO252) | Ptot | - 83 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Continuous diode forward current | IS | - 48 | A | TC=25C |
| Diode pulse current | IS,pulse | - 151 | A | TC=25C |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Maximum diode commutation speed | diF/dt | - 50 | A/us | VDS=0...400V, ISD<=48A, Tj=25C |
| Insulation withstand voltage | VISO | n.a. | V | Vrms, TC=25C, t=1min |
| Thermal characteristics (TO220 FullPAK) | Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 4.0 | C/W | ||
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal characteristics (TO251 and TO252) | Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 1.5 | C/W | ||
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2410121538_ANHI-ASD65R350E_C5440010.pdf
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