ASW60R090EFD N Channel Enhancement Mode MOSFET Ideal for Phase Shift Bridge LLC Resonant Topologies
Key Attributes
Model Number:
ASW60R090EFD
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
47A
RDS(on):
90mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
4.6pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
4.799nF@50V
Pd - Power Dissipation:
391W
Gate Charge(Qg):
65nC
Mfr. Part #:
ASW60R090EFD
Package:
TO-247
Product Description
Product Overview
The ASA60R090EFD and ASW60R090EFD are N-Channel Silicon MOSFETs designed for soft-switching applications. They are ideal for Boost PFC, Half-Bridge, Full-Bridge, Phase-Shift-Bridge (ZVS), and LLC resonant topologies. These MOSFETs are suitable for use in Telecom Power, EV Charging, Solar Inverters, and Application Servers. Key features include low drain-source on-resistance (RDS(on)) and easy gate switching control, with a typical RDS(on) of 0.080 and a threshold voltage (Vth) between 3 to 5V. They are available in TO220F and TO247 packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement mode
- Packaging: TO220F, TO247
Technical Specifications
| Model | Part Name | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|
| MOSFET | ASA60R090EFD | 650 | 90 | 65 | 141 | 50 |
| MOSFET | ASW60R090EFD | 650 | 90 | 65 | 141 | 50 |
| Parameter | Symbol | Unit | Value (Min) | Value (Typ) | Value (Max) | Note / Test Condition |
|---|---|---|---|---|---|---|
| Maximum Ratings | Continuous drain current | ID | - | - | 47 | A (TC=25C, Limited by Tj,max, D = 0.50) |
| Pulsed drain current | ID,pulse | - | - | 141 | A (TC=25C, Pulse width tp limited by Tj,max) | |
| Avalanche energy, single pulse | EAS | - | - | 5336 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 59 | V/ns (VDS=0...400V) | |
| Gate source voltage (static) | VGS | - | -20 | 20 | V | |
| Gate source voltage (dynamic) | VGS | - | -30 | 30 | V (AC, f>1 Hz) | |
| Power dissipation (TO220F) | Ptot | - | - | 34 | W (TC=25C) | |
| Power dissipation (TO247) | Ptot | - | - | 391 | W (TC=25C) | |
| Storage temperature | Tstg | -55 | - | 150 | C | |
| Operating junction temperature | Tj | -55 | - | 150 | C | |
| Reverse diode dv/dt | dv/dt | - | - | 50 | V/ns (VDS=0...400V, ISD<=48A, Tj=25C) | |
| Thermal Characteristics (TO220F) | Thermal resistance, junction - case | RthJC | - | - | 3.65 | C/W |
| Thermal resistance, junction - ambient | RthJA | - | - | 80 | C/W (device on PCB, minimal footprint) | |
| Thermal Characteristics (TO247) | Thermal resistance, junction - case | RthJC | - | - | 0.32 | C/W |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W (device on PCB, minimal footprint) | |
| Static Characteristics | Drain-source breakdown voltage | V(BR)DSS | 605 | - | - | V (VGS=0V, ID=10mA) |
| Gate threshold voltage | V(GS)th | 3 | - | 5 | V (VDS=VGS, ID=250uA) | |
| Zero gate voltage drain current | IDSS | - | - | 5 | uA (VDS=600V, VGS=0V, Tj=25C) | |
| Gate-source leakage current | IGSS | - | - | 100 | nA (VGS=30V, VDS=0V) | |
| Drain-source on-state resistance | RDS(on) | - | 0.080 | 0.090 | (VGS=10V, ID=20A, Tj=25C) | |
| Gate resistance (Intrinsic) | RG | - | 14 | - | (f=1MHz, open drain) | |
| Dynamic Characteristics | Input capacitance | Ciss | - | 4799 | - | pF (VGS=0V, VDS=50V, f=10kHz) |
| Output capacitance | Coss | - | 482 | - | pF (VGS=0V, VDS=50V, f=10kHz) | |
| Reverse transfer capacitance | Crss | - | 4.6 | - | pF (VGS=0V, VDS=50V, f=10kHz) | |
| Turn-on delay time | td(on) | - | 38.8 | - | ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7) | |
| Rise time | tr | - | 26.8 | - | ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7) | |
| Dynamic Characteristics (cont.) | Turn-off delay time | td(off) | - | 134.8 | - | ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7) |
| Fall time | tf | - | 20 | - | ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7) | |
| Gate Charge Characteristics | Gate to source charge | Qgs | - | 20 | - | nC (VDD=400V, ID=25.8A, VGS=0 to 10V) |
| Gate to drain charge | Qgd | - | 24 | - | nC (VDD=400V, ID=25.8A, VGS=0 to 10V) | |
| Gate charge total | Qg | - | 65 | - | nC (VDD=400V, ID=25.8A, VGS=0 to 10V) | |
| Gate plateau voltage | Vplateau | - | 7.4 | - | V (VDD=400V, ID=25.8A, VGS=0 to 10V) | |
| Reverse Diode Characteristics | Diode forward voltage | VSD | - | 0.66 | - | V (VGS=0V, IF=1A, Tj=25C) |
| Reverse recovery time | trr | - | 120.8 | - | ns (Vr=400v,IF=9.6A,di/dt=100A/us) | |
| Reverse recovery charge | Qrr | - | 0.7 | - | uC (Vr=400v,IF=9.6A,di/dt=100A/us) | |
| Peak reverse recovery current | Irrm | - | 11.3 | - | A (Vr=400v,IF=9.6A,di/dt=100A/us) |
2410121609_ANHI-ASW60R090EFD_C5440016.pdf
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