30 Volt Dual N Channel Power MOSFET ASDsemi ASDM30DN40E-R with Performance and Low RDS On Resistance
Key Attributes
Model Number:
ASDM30DN40E-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
2 N-Channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
830pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ASDM30DN40E-R
Package:
PDFN3333-8
Product Description
Product Overview
The Ascend Semiconductor ASDM30DN40E is a 30V Dual N-Channel Power MOSFET designed for high efficiency and fast switching applications. It features low on-resistance (RDS(on)) at various gate-source voltages, including VGS=4.5V and VGS=10V, with typical values of 8 m at VGS=10V and 12-18 m at VGS=4.5V. This RoHS compliant component is suitable for applications requiring robust performance and reliability, indicated by its continuous drain current ratings and avalanche energy capabilities. The device is available in a PDFN 3.3x3.3-8 package.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd
- Product Line: Power MOSFET
- Channel Type: Dual N-Channel
- Mode: Enhancement mode
- Compliance: Pb-free lead plating; RoHS compliant
- Package Type: PDFN 3.3x3.3-8
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| General Parameters | ||||||
| V(BR)DSS | Drain-Source breakdown voltage | 30 | -- | -- | V | |
| VGS | Gate-Source voltage | -- | -- | 20 | V | |
| ID | Continuous drain current @VGS=10V | TA=25C | -- | 30 | -- | A |
| ID | Continuous drain current @VGS=10V | TC=100C | -- | 19 | -- | A |
| IDM | Pulse drain current | TC=25C | -- | 120 | -- | A |
| ID | Continuous drain current @VGS=10V | TA=25C | -- | 11 | -- | A |
| ID | Continuous drain current @VGS=10V | TA=70C | -- | 9 | -- | A |
| EAS | Avalanche energy, single pulsed | -- | 16 | -- | mJ | |
| PD | Maximum power dissipation | TC=25C | -- | 20 | -- | W |
| PD | Maximum power dissipation | TC=100C | -- | 8 | -- | W |
| PDSM | Maximum power dissipation | TA=25C | -- | 2.8 | -- | W |
| PDSM | Maximum power dissipation | TA=70C | -- | 1.8 | -- | W |
| TSTG, J | Storage and junction temperature range | -55 | -- | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | -- | 6.2 | -- | C/W | |
| RJA | Thermal Resistance, Junction-to-Ambient | -- | 45 | -- | C/W | |
| Static Electrical Characteristics @ Tj = 25C | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V,VGS=0V (Tj=25) | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V,VGS=0V (Tj=125) | -- | -- | 100 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.3 | 1.5 | 2.4 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | -- | 8 | 13 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | -- | 12 | 18 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A , Tj=100 | -- | 13 | -- | m |
| Dynamic Electrical Characteristics @ Tj = 25C | ||||||
| Ciss | Input Capacitance | VDS=15V,VGS=0V, f=1MHz | -- | 830 | -- | pF |
| Coss | Output Capacitance | VDS=15V,VGS=0V, f=1MHz | -- | 110 | -- | pF |
| Crss | Reverse Transfer Capacitance | VDS=15V,VGS=0V, f=1MHz | -- | 105 | -- | pF |
| Rg | Gate Resistance | f=1MHz | -- | 4.7 | -- | |
| td(on) | Turn-on Delay Time | VDD=15V, ID=20A, RG=3, VGS=10V | -- | 56 | -- | ns |
| tr | Turn-on Rise Time | VDD=15V, ID=20A, RG=3, VGS=10V | -- | 26 | -- | ns |
| td(off) | Turn-Off Delay Time | VDD=15V, ID=20A, RG=3, VGS=10V | -- | 56 | -- | ns |
| tf | Turn-Off Fall Time | VDD=15V, ID=20A, RG=3, VGS=10V | -- | 12 | -- | ns |
| Qg (10V) | Total Gate Charge | VDS=15V,ID=20A, VGS=10V | -- | 23 | -- | nC |
| Qg (4.5V) | Total Gate Charge | VDS=15V,ID=20A, VGS=4.5V | -- | 11 | -- | nC |
| Qgs | Gate-Source Charge | VDS=15V,ID=20A, VGS=10V | -- | 4.2 | -- | nC |
| Qgd | Gate-Drain Charge | VDS=15V,ID=20A, VGS=10V | -- | 5.6 | -- | nC |
| Source-Drain Diode Characteristics@ Tj = 25C | ||||||
| VSD | Forward on voltage | ISD=20A,VGS=0V | -- | 0.9 | 1.2 | V |
| trr | Reverse Recovery Time | Tj=25,ISD=20A, VGS=0V, di/dt=100A/s | -- | 6.8 | -- | ns |
| Qrr | Reverse Recovery Charge | Tj=25,ISD=20A, VGS=0V, di/dt=100A/s | -- | 2.0 | -- | nC |
| Package Outline Data | ||||||
| Symbol | Dimensions (unit: mm) | Min | Typ | Max | ||
| A | 0.70 | 0.75 | 0.80 | |||
| b | 0.25 | 0.30 | 0.35 | |||
| c | 0.10 | 0.15 | 0.25 | |||
| D | 3.25 | 3.35 | 3.45 | |||
| D1 | 3.00 | 3.10 | 3.20 | |||
| D2 | 1.78 | 1.88 | 1.98 | |||
| D3 | -- | 0.13 | -- | |||
| E | 3.20 | 3.30 | 3.40 | |||
| E1 | 3.00 | 3.15 | 3.20 | |||
| E2 | 2.39 | 2.49 | 2.59 | |||
| e | 0.65 BSC | |||||
| H | 0.30 | 0.39 | 0.50 | |||
| L | 0.30 | 0.40 | 0.50 | |||
| L1 | -- | 0.13 | -- | |||
| K | 0.30 | -- | -- | |||
| -- | 10 | 12 | ||||
| M | 0.15 * | -- | -- | |||
| Ordering and Marking Information | ||||||
| PACKAGE | MARKING | Device No. | Marking | Package | Packing | Quantity |
| PDFN3.3*3.3-8 | 30DN40 | ASDM30DN40E-R | 30DN40 | PDFN3.3*3.3-8 | Tape&Reel | 5000/Reel |
Notes:
Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25C, L = 0.5mH, RG = 25, IAS = 8A, VGS =10V. Part not recommended for use above this value.
The power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150C.
Pulse width 300s; duty cycle 2%.
2410121548_ASDsemi-ASDM30DN40E-R_C2972861.pdf
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