ASDsemi ASDM100R090NP T MOSFET featuring 100 percent UIS and Rg tested for power switching applications
Key Attributes
Model Number:
ASDM100R090NP-T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF@50V
Output Capacitance(Coss):
270pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
3.35nF
Gate Charge(Qg):
49nC@10V
Mfr. Part #:
ASDM100R090NP-T
Package:
TO-220
Product Description
Product Overview
The ASDM100R090NP is a 100V N-CHANNEL MOSFET designed for high-speed power switching and logic-level applications. It features enhanced body diode dv/dt capability and avalanche ruggedness, with 100% UIS and Rg tested. This MOSFET is ideal for synchronous rectification in SMPS, hard switching and high-speed circuits, and DC/DC converters in telecoms and industrial sectors. It is also Lead Free and Halogen Free.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: N-CHANNEL MOSFET
- Certifications: Lead Free, Halogen Free
- Testing: 100% UIS Tested, 100% Rg Tested
- Version: 1.0
- Date: NOV 2018
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain to Source Voltage | VDS | 100 | V | |||
| Drain to Source Voltage | VDS Max | 100 | V | |||
| Continuous Drain Current (Silicon Limited) | ID | TC=25 | 75 | A | ||
| Continuous Drain Current (Silicon Limited) | ID | TC=100 | 40 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Drain to Source on Resistance | RDS(on) | VGS=10V, ID=14A | 9 | m | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 1 | 1.8 | V | |
| Gate to Source Voltage | VGS | -20 | +20 | V | ||
| Gate to Source Voltage | VGS | -12 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=95V, Tj=25 | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=95V, Tj=125 | 100 | A | ||
| Gate to Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Drain to Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-Ambient (steady state) | RJA | 75 | /W | |||
| Thermal Resistance Junction-Ambient (t10s) | RJA | 80 | /W | |||
| Thermal Resistance Junction-Lead | RJL | 23 | /W | |||
| Absolute Maximum Ratings | ||||||
| Operating and Storage Temperature | TJ, Tstg | -55 | 150 | |||
| Power Dissipation | PDM | TC=25 | 75 | W | ||
| Avalanche Energy, Single Pulse | EAS | L=0.1mH, TC=25 | 80 | mJ | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=50V, f=1MHz | 250 | 270 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=50V, f=1MHz | 12 | 15.5 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=50V, f=1MHz | 7 | 8 | pF | |
| Gate Resistance | RG | 49 | ||||
| Rise time | tr | VDD=50V, ID=14A, VGS=10V, RG=10 | 5 | ns | ||
| Turn on Delay Time | td(on) | VDD=50V, ID=14A, VGS=10V, RG=10 | 9 | ns | ||
| Turn off Delay Time | td(off) | VDD=50V, ID=14A, VGS=10V, RG=10 | 10 | ns | ||
| Fall Time | tf | VDD=50V, ID=14A, VGS=10V, RG=10 | 6 | ns | ||
| Total Gate Charge | Qg | VDD=50V, ID=14A, VGS=10V | 21 | nC | ||
| Total Gate Charge | Qg(4.5V) | VGS=4.5V, ID=10A | 5.5 | nC | ||
| Gate to Drain (Miller) Charge | Qgd | VDD=50V, ID=14A, VGS=10V | 3.2 | nC | ||
| Gate to Source Charge | Qgs | VDD=50V, ID=14A, VGS=10V | 12 | nC | ||
| Transconductance | gfs | VDS=5V, ID=14A | 33.5 | S | ||
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IF=14A | 0.9 | 1.2 | V | |
| Reverse Recovery Time | trr | VR=50V, IF=14A, dIF/dt=500A/s | 47 | ns | ||
| Reverse Recovery Charge | Qrr | VR=50V, IF=14A, dIF/dt=500A/s | 226 | nC | ||
| Model Information | ||||||
| Model Number | ASDM100R090NP | |||||
| Voltage Rating | 100V | |||||
| Package Information | ||||||
| Package Type | TO-220 | |||||
| Packing | TUBE | |||||
| Quantity | 50 | |||||
| Dimensions (TO-220) | ||||||
| Symbol | Min (mm) | Max (mm) | Min (inch) | Max (inch) | ||
| A | 4.00 | 4.80 | 0.157 | 0.189 | ||
| A1 | 1.80 | 2.80 | 0.071 | 0.110 | ||
| b | 0.60 | 1.00 | 0.024 | 0.039 | ||
| b1 | 1.14 | 1.78 | 0.045 | 0.070 | ||
| C | 1.00 | 1.40 | 0.039 | 0.055 | ||
| C1 | 0.36 | 0.61 | 0.014 | 0.024 | ||
| D | 9.90 | 10.50 | 0.390 | 0.413 | ||
| E | 8.38 | 9.20 | 0.330 | 0.362 | ||
| e | 2.54 TYP | 0.100 TYP | ||||
| F | ||||||
| 3.50 | 3.90 | 0.138 | 0.154 | |||
| H | 14.48 | 15.87 | 0.570 | 0.625 | ||
| L | 13.00 | 13.80 | 0.512 | 0.543 | ||
| L1 | --- | 4.10 | --- | 0.161 | ||
2410121810_ASDsemi-ASDM100R090NP-T_C2972855.pdf
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