Low resistance N Channel MOSFET ANHI AUP052N085 for power switching in PD adaptors and power supplies
Key Attributes
Model Number:
AUP052N085
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
119A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Input Capacitance(Ciss):
4.587nF
Pd - Power Dissipation:
183W
Gate Charge(Qg):
-
Mfr. Part #:
AUP052N085
Package:
TO-220
Product Description
Product Overview
The AUP052N085, AUB050N085, and AUN045N085 are N-Channel Silicon MOSFETs designed for efficient power switching applications. They feature low drain-source on-resistance and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. These MOSFETs are ideal for use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
Key Performance Parameters
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUP052N085 | TO220 | AUP052N085 | 85 | 5.2 | 68.4 | 480 |
| AUB050N085 | TO263 | AUB050N085 | 85 | 5.2 | 68.4 | 480 |
| AUN045N085 | DFN5X6 | AUN045N085 | 85 | 5.2 | 68.4 | 480 |
Maximum Ratings (Tj = 25C, unless otherwise specified)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 119 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Continuous drain current | ID | - | - | 89 | A | TC=100C |
| Pulsed drain current | ID,pulse | - | - | 480 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 420 | mJ | Tc=25, VDD=50V, I=41A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 41 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Power dissipation | Ptot | - | - | 183 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Transconductance | GFS | - | 76 | - | S | VDS=5V IDS=50A |
Thermal Characteristics (TO220)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 0.9 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
Thermal Characteristics (TO263)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 1.0 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 60 | C/W | device on PCB, minimal footprint |
Thermal Characteristics (DFN5X6)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 1.3 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 50 | C/W | device on PCB, minimal footprint |
Static Characteristics (Tj=25C, unless otherwise specified)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 | - | 3.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=85V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 4.2 | 5.2 | m | VGS=10V, ID=20A, Tj=25C (TO220) |
| Drain-source on-state resistance | RDS(on) | - | 3.9 | 5.0 | m | VGS=10V, ID=20A, Tj=25C (TO263) |
| Drain-source on-state resistance | RDS(on) | - | 3.7 | 4.5 | m | VGS=10V,ID=20A, Tj=25C (DFN5X6) |
| Gate resistance (Intrinsic) | RG | - | 1.8 | - | f=1MHz, open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 4587 | - | pF | VGS=0V, VDS=40V, f=1MHz |
| Output capacitance | Coss | - | 824 | - | pF | VGS=0V, VDS=40V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 5.5 | - | pF | VGS=0V, VDS=40V, f=0.7MHz |
| Turn-on delay time | td(on) | - | 22 | - | ns | VDD=40V,VGS=10V,ID=56A, RG=1.6 |
| Rise time | tr | - | 33.6 | - | ns | VDD=40V,VGS=10V,ID=56A, RG=1.6 |
| Turn-off delay time | td(off) | - | 34.6 | - | ns | VDD=40V,VGS=10V,ID=56A, RG=1.6 |
| Fall time | tf | - | 17.4 | - | ns | VDD=40V,VGS=10V,ID=56A, RG=1.6 |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 24.6 | - | nC | VDD=40V, ID=56A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 15.5 | - | nC | VDD=40V, ID=56A, VGS=0 to 10V |
| Gate charge total | Qg | - | 68.4 | - | nC | VDD=40V, ID=56A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - | 5.2 | - | V | VDD=40V, ID=56A, VGS=0 to 10V |
Reverse Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Diode forward voltage | VSD | - | 0.7 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 44 | - | ns | VR=40V, IF=56A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 42 | - | nC | VR=40V, IF=56A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 1.9 | - | A | VR=40V, IF=56A, diF/dt=100A/s |
2410121512_ANHI-AUP052N085_C5440036.pdf
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