ASDsemi ASDM40N60KQ R power MOSFET designed for high frequency circuits and uninterruptible power supply
Key Attributes
Model Number:
ASDM40N60KQ-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
-
Input Capacitance(Ciss):
1.8nF@20V
Pd - Power Dissipation:
65W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
ASDM40N60KQ-R
Package:
TO-252-3
Product Description
Product Overview
The Ascend Semiconductor ASDM40N60KQ is a 40V N-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET offers excellent thermal dissipation properties and special process technology for high ESD capability. It is suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supply applications.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd
- Product Family: MOSFET
- Channel Type: N-Channel
- Package Type: TO-252-2L
- Date of Origin: NOV 2018
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 40 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Drain Current-Continuous | ID | - | - | - | 60 | A |
| Drain Current-Continuous (TC=100) | ID (100) | - | - | - | 42 | A |
| Pulsed Drain Current | IDM | - | - | - | 240 | A |
| Maximum Power Dissipation | PD | - | - | - | 65 | W |
| Derating factor | - | - | - | - | 0.43 | W/ |
| Single pulse avalanche energy (Note 5) | EAS | TJ=25, VDD=20V, VG=10V, L=1mH, Rg=25 | - | - | 400 | mJ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | - | -55 | - | 175 | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 1.2 | 1.6 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 5.8 | 7.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 7.5 | 9.5 | mΩ |
| Forward Transconductance | gFS | VDS=10V, ID=20A | 15 | - | - | S |
| Input Capacitance | Ciss | - | - | 1800 | - | pF |
| Output Capacitance | Coss | - | - | 280 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V, VGS=0V, F=1.0MHz | - | 190 | - | pF |
| Turn-on Delay Time | td(on) | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 6.4 | - | nS |
| Turn-on Rise Time | tr | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 17.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 29.6 | - | nS |
| Turn-Off Fall Time | tf | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 16.8 | - | nS |
| Total Gate Charge | Qg | VDS=20V, ID=20A, VGS=10V | - | 29 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V, ID=20A, VGS=10V | - | 4.5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=20V, ID=20A, VGS=10V | - | 6.4 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V, IS=10A | - | 1.2 | - | V |
| Diode Forward Current | IS | - | - | - | 60 | A |
| Reverse Recovery Time | trr | TJ = 25°C, IF = 20A, di/dt = 100A/µs (Note 3) | - | 29 | - | nS |
| Reverse Recovery Charge | Qrr | TJ = 25°C, IF = 20A, di/dt = 100A/µs (Note 3) | - | 26 | - | nC |
2410121617_ASDsemi-ASDM40N60KQ-R_C2972867.pdf
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