ASM60R330E N Channel MOSFET Featuring Low RDS on and Typical Threshold Voltage for Power Electronics
Key Attributes
Model Number:
ASM60R330E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
330mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
6.4pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.082nF@50V
Pd - Power Dissipation:
176W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASM60R330E
Package:
DFN8x8
Product Description
Product Overview
The ASA60R330E, ASD60R330E, and ASM60R330E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These devices feature low drain-source on-resistance (RDS(on)) for easy gate control and are built in enhancement mode with a typical threshold voltage (Vth) of 2.8V to 4.2V. They are suitable for various power conversion topologies including Boost PFC, single-ended flyback, half-bridge, asymmetric half-bridge, and series resonance half-bridge. Applications include PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, server power, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA60R330E | TO220F | ASA60R330E | 650 | 330 | 22 | 33 |
| ASD60R330E | TO252 | ASD60R330E | 650 | 330 | 22 | 33 |
| ASM60R330E | DFN8x8 | ASM60R330E | 650 | 330 | 22 | 33 |
| ASA60R330E, ASD60R330E, ASM60R330E | DFN8x8 | ASA60R330E, ASD60R330E, ASM60R330E | 650 | 330 | 22 | 33 |
| Parameter | Symbol | Values Unit | Note / Test Condition |
|---|---|---|---|
| Continuous drain current | ID | - 11 A | TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - - 33 A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - - 400 mJ | Tc=25,VDD=50V,L= 10mH, RG=25 |
| Avalanche current, single pulse | IAR | - - 7 A | Tc=25,VDD=50V,L = 10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - - 70 V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - - 32 W | TC=25C |
| Power dissipation (TO252) | Ptot | - - 83 W | TC=25C |
| Power dissipation (DFN8x8) | Ptot | - - 176 W | TC=25C |
| Storage temperature | Tstg | -55 - 150 C | |
| Operating junction temperature | Tj | -55 - 150 C | |
| Reverse diode dv/dt | dv/dt | - - 15 V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Drain-source breakdown voltage | V(BR)DSS | 605 - - V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 4.2 V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - - 1 uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - - 100 nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.305 0.33 | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 2 4.8 9.6 | f=1MHz |
| Input capacitance | Ciss | 720 901 1082 pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 47 59 71 pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 4.2 5.3 6.4 pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 5.7 7.2 8.6 ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Rise time | tr | 16.6 20.8 24.9 ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Turn-off delay time | td(off) | 23.3 29.2 35.1 ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Fall time | tf | 15.3 19.2 23.1 ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Gate to source charge | Qgs | 4.6 5.8 7.1 nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 13.6 17 20.4 nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate charge total | Qg | 17.5 22 26.5 nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 4.2 5.3 6.4 V | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.5 0.74 1.2 V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 200 250 300 ns | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2.057 2.572 3.086 uC | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 15.7 19.6 23.5 A | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Thermal resistance, junction - case (TO220F) | RthJC | - - 3.9 C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - - 80 C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO252) | RthJC | - - 1.5 C/W | |
| Thermal resistance, junction - ambient (TO252) | RthJA | - - 62 C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (DFN8x8) | RthJC | - - 0.71 C/W | |
| Thermal resistance, junction - ambient (DFN8x8) | RthJA | - - 62 C/W | device on PCB, minimal footprint |
DFN8*8 Packing and Carry Tape Size:
3000pcs/reel
Unit: mm
2410121550_ANHI-ASM60R330E_C5440039.pdf
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