High Cell Density P Channel MOSFET Axelite Tech AM9435SA Featuring DMOS Trench Technology and Low On Resistance

Key Attributes
Model Number: AM9435SA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
680pF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
2.8W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
AM9435SA
Package:
SOP-8
Product Description

Product Overview

The AM9435 is a P-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This advanced process is specifically designed to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is particularly well-suited for low-voltage applications, notebook computer power management, and other battery-powered circuits requiring high-side switching. Key features include a breakdown voltage of -30V, continuous drain current capabilities of -5.2A at VGS = -10V and -4.0A at VGS = -4.5V, and an extremely low RDS(ON) of < 60m at VGS = -10V. The AM9435 is fully RoHS compliant and comes in an SOP-8 package.

Product Attributes

  • Brand: Axelite
  • Package: SOP-8
  • Technology: P-Channel logic enhancement mode, high cell density, DMOS trench technology
  • Compliance: Full RoHS compliance

Technical Specifications

Parameter Condition Min Typical Max Unit
Absolute Maximum Ratings (TA = 25 Unless otherwise noted)
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current (TJ=150) VGS = -10V -5.2 A
IDM Pulsed Drain Current -20 A
IS Continuous Source Current (Diode Conduction) -2.4 A
TJ Operation Junction Temperature -55 150
TSTG Storage Temperature Range -55 150
PD Power Dissipation TA=25 2.8 W
PD Power Dissipation TA=70 1.8 W
RJA Thermal Resistance-Junction to Ambient 70 /W
Electrical Characteristics (TA = 25 Unless otherwise noted)
V(BR)DSS Drain-Source Breakdown Voltage VGS =0V,ID =-250A -30 V
VGS(th) Gate Threshold Voltage VDS =VGS,ID =-250A -1.0 -3.0 V
IGSS Gate Leakage Current VDS =0V,VGS=20V 100 nA
IDSS Zero Gate Voltage Drain Current VDS =-30V,VGS =0V -1 A
IDSS Zero Gate Voltage Drain Current VDS =-30V,VGS =0V TJ =55 -5 A
ID(ON) On-State Drain Current VDS -5V,VGS -10V -25 A
RDS(ON) Drain-source On-Resistance VGS =-10V,ID=-5.2A 48 60 m
RDS(ON) Drain-source On-Resistance VGS =-4.5V, ID=-4.0A 74 90 m
Gfs Forward Transconductance VDS =-10V,ID =-5.2A 10 S
Is Diode forward Current (Max.) 2.6 A
VSD Diode Forward Voltage IS=-2.0A,VGS=0V -0.8 -1.2 V
Dynamic Parameters
Qg Total Gate Charge VDS =-15V,VGS =-10V ID =-5.0A 15 nC
Qgs Gate-Source Charge 4.0 nC
Qgd Gate-Drain Charge 2.0 nC
Ciss Input Capacitance VDS =-15V,VGS =0V f =1MHz 680 pF
Coss Output Capacitance 120 pF
Crss Reverse Transfer Capacitance 75 pF
td(on) Turn-On Time VDD =-15V,RL =15 ID =-1.0A,VGEN =-10V RG =6 7.0 15 nS
tr 10 20 nS
td(off) Turn-Off Time 40 80 nS
tf 20 40 nS

Applications

  • Power Management in Notebooks
  • Portable Equipment
  • Battery Powered Systems
  • DC/DC Converters
  • Load Switches
  • DSC (Digital Still Cameras)
  • LCD Display Inverters

Part Marking Information

AM9435X - X YY: Year Code WW: Week Code A: Process Code

MARKING: AM9435 YYWWA

Ordering Information

Part Number Package Code Package Shipping
AM9435S-A S SOP-8 2500 /Tape&Reel

Note: SOP-8 is only available in tape and reel packaging. (A reel contains 2500 devices)

Package Dimensions

SOP-8 Package Dimensions (Refer to page 6 of the datasheet for visual representation)


2410121651_Axelite-Tech-AM9435SA_C224230.pdf

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