High Cell Density P Channel MOSFET Axelite Tech AM9435SA Featuring DMOS Trench Technology and Low On Resistance
Product Overview
The AM9435 is a P-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This advanced process is specifically designed to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is particularly well-suited for low-voltage applications, notebook computer power management, and other battery-powered circuits requiring high-side switching. Key features include a breakdown voltage of -30V, continuous drain current capabilities of -5.2A at VGS = -10V and -4.0A at VGS = -4.5V, and an extremely low RDS(ON) of < 60m at VGS = -10V. The AM9435 is fully RoHS compliant and comes in an SOP-8 package.
Product Attributes
- Brand: Axelite
- Package: SOP-8
- Technology: P-Channel logic enhancement mode, high cell density, DMOS trench technology
- Compliance: Full RoHS compliance
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25 Unless otherwise noted) | |||||
| VDSS | Drain-Source Voltage | -30 | V | ||
| VGSS | Gate-Source Voltage | 20 | V | ||
| ID | Continuous Drain Current (TJ=150) VGS = -10V | -5.2 | A | ||
| IDM | Pulsed Drain Current | -20 | A | ||
| IS | Continuous Source Current (Diode Conduction) | -2.4 | A | ||
| TJ | Operation Junction Temperature | -55 | 150 | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| PD | Power Dissipation TA=25 | 2.8 | W | ||
| PD | Power Dissipation TA=70 | 1.8 | W | ||
| RJA | Thermal Resistance-Junction to Ambient | 70 | /W | ||
| Electrical Characteristics (TA = 25 Unless otherwise noted) | |||||
| V(BR)DSS | Drain-Source Breakdown Voltage VGS =0V,ID =-250A | -30 | V | ||
| VGS(th) | Gate Threshold Voltage VDS =VGS,ID =-250A | -1.0 | -3.0 | V | |
| IGSS | Gate Leakage Current VDS =0V,VGS=20V | 100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current VDS =-30V,VGS =0V | -1 | A | ||
| IDSS | Zero Gate Voltage Drain Current VDS =-30V,VGS =0V TJ =55 | -5 | A | ||
| ID(ON) | On-State Drain Current VDS -5V,VGS -10V | -25 | A | ||
| RDS(ON) | Drain-source On-Resistance VGS =-10V,ID=-5.2A | 48 | 60 | m | |
| RDS(ON) | Drain-source On-Resistance VGS =-4.5V, ID=-4.0A | 74 | 90 | m | |
| Gfs | Forward Transconductance VDS =-10V,ID =-5.2A | 10 | S | ||
| Is | Diode forward Current (Max.) | 2.6 | A | ||
| VSD | Diode Forward Voltage IS=-2.0A,VGS=0V | -0.8 | -1.2 | V | |
| Dynamic Parameters | |||||
| Qg | Total Gate Charge VDS =-15V,VGS =-10V ID =-5.0A | 15 | nC | ||
| Qgs | Gate-Source Charge | 4.0 | nC | ||
| Qgd | Gate-Drain Charge | 2.0 | nC | ||
| Ciss | Input Capacitance VDS =-15V,VGS =0V f =1MHz | 680 | pF | ||
| Coss | Output Capacitance | 120 | pF | ||
| Crss | Reverse Transfer Capacitance | 75 | pF | ||
| td(on) | Turn-On Time VDD =-15V,RL =15 ID =-1.0A,VGEN =-10V RG =6 | 7.0 | 15 | nS | |
| tr | 10 | 20 | nS | ||
| td(off) | Turn-Off Time | 40 | 80 | nS | |
| tf | 20 | 40 | nS | ||
Applications
- Power Management in Notebooks
- Portable Equipment
- Battery Powered Systems
- DC/DC Converters
- Load Switches
- DSC (Digital Still Cameras)
- LCD Display Inverters
Part Marking Information
AM9435X - X YY: Year Code WW: Week Code A: Process Code
MARKING: AM9435 YYWWA
Ordering Information
| Part Number | Package Code | Package | Shipping |
|---|---|---|---|
| AM9435S-A | S | SOP-8 | 2500 /Tape&Reel |
Note: SOP-8 is only available in tape and reel packaging. (A reel contains 2500 devices)
Package Dimensions
SOP-8 Package Dimensions (Refer to page 6 of the datasheet for visual representation)
2410121651_Axelite-Tech-AM9435SA_C224230.pdf
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