Silicon MOSFET AUP026N085 N Channel Type Suitable for Synchronous Rectification and DC DC Converters
Key Attributes
Model Number:
AUP026N085
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
247A
RDS(on):
2.6mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Number:
1 N-channel
Output Capacitance(Coss):
3.5nF
Input Capacitance(Ciss):
11nF
Pd - Power Dissipation:
275W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
AUP026N085
Package:
TO-220
Product Description
Product Overview
The AUP026N085 and AUB026N085 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include a low drain-source on-resistance of 2.1m (typ.), enhanced body diode dv/dt capability, and robust avalanche ruggedness.
Product Attributes
- Product Type: MOSFET Silicon N-Channel MOS
Technical Specifications
| Product Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUP026N085 | TO220 | AUP026N085 | 85 | 2.6 | 152 | 998 |
| AUB026N085 | TO263 | AUB026N085 | 85 | 2.6 | 152 | 998 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2 - 4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - - 1 | uA | VDS=85V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - - +/-100 | nA | VGS=+/-20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 2.1 2.6 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 2.4 - | f=1MHz, open drain | |
| Input capacitance | Ciss | - 11000 - | pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | - 3500 - | pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | - 350 - | pF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | - 33 - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Rise time | tr | - 47 - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Turn-off delay time | td(off) | - 89 - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Fall time | tf | - 46 - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Gate to source charge | Qgs | - 46 - | nC | VDD=42V, ID=80A, VGS=10V |
| Gate to drain charge | Qgd | - 46 - | nC | VDD=42V, ID=80A, VGS=10V |
| Gate charge total | Qg | - 152 - | nC | VDD=42V, ID=80A, VGS=10V |
| Continuous Source Current at silicon | ISD | - - 229 | A | |
| Diode forward voltage | VSD | - 0.8 1.2 | V | VGS=0V, Is=1A, Tj=25C |
| Reverse recovery time | trr | - 103 - | ns | Vgs=0V, IF=80A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 118 - | nC | Vgs=0V, IF=80A, diF/dt=100A/s |
2410121521_ANHI-AUP026N085_C18722991.pdf
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