N Channel MOSFET AUA060N08AG for synchronous rectification and high speed switching applications
Key Attributes
Model Number:
AUA060N08AG
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
35A
RDS(on):
100mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.95V
Reverse Transfer Capacitance (Crss@Vds):
24.24pF
Number:
-
Pd - Power Dissipation:
188W
Input Capacitance(Ciss):
3.73nF
Gate Charge(Qg):
55.7nC
Mfr. Part #:
AUA060N08AG
Package:
TO-220F
Product Description
Product Overview
The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, and telecommunications, offering low drain-source on-resistance and enhanced ruggedness. Key features include high electrical performance, fast switching speeds, and an enhanced avalanche ruggedness, making them ideal for demanding industrial and telecom applications.
Product Attributes
- Brand: AUA
- Channel Type: N-Channel
- Technology: Silicon
Technical Specifications
| Part Name | Package | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse | Marking |
|---|---|---|---|---|---|---|
| AUA060N08AG | TO220F | 80V | 6.0 m | 55.7 nC | 240A | 8AG |
| AUB060N08AG | TO263 | 80V | 6.0 m | 55.7 nC | 240A | 8AG |
| AUP060N08AG | DFN5x6 | 80V | 6.0 m | 55.7 nC | 240A | 8AG |
| AUN060N08AG | TO252 | 80V | 6.0 m | 55.7 nC | 240A | 8AG |
| AUD060N08AG | TO220 | 80V | 6.0 m | 55.7 nC | 240A | 8AG |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.5 - 3.4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 5.4 - 6.0 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 1.2 - | f=1MHz, open drain | |
| Input capacitance | Ciss | - 3730 - | pF | Vds=40V,Vgs=0V f=1MHz |
| Output capacitance | Coss | - 674 - | pF | Vds=40V,Vgs=0V f=1MHz |
| Reverse transfer capacitance | Crss | - 24.24 - | pF | Vds=40V,Vgs=0V f=1MHz |
| Turn-on delay time | td(on) | - 16.5 - | ns | VDD=40V,VGS=10V,RG=10 ID=20A |
| Rise time | tr | - 13.7 - | ns | VDD=40V,VGS=10V,RG=10 ID=20A |
| Turn-off delay time | td(off) | - 35.9 - | ns | VDD=40V,VGS=10V,RG=10 ID=20A |
| Fall time | tf | - 13.45 - | ns | VDD=40V,VGS=10V,RG=10 ID=20A |
| Gate to source charge | Qgs | - 15.9 - | nC | VDS=40V,VGS=0 to 10V ID=20A |
| Gate to drain charge | Qgd | - 13.3 - | nC | VDS=40V,VGS=0 to 10V ID=20A |
| Gate charge total | Qg | - 55.7 - | nC | VDS=40V,VGS=0 to 10V ID=20A |
| Diode forward voltage | VSD | - 0.7 - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 40.9 - | ns | VR=40V,IF=20A, diF/dt=200A/us |
| Reverse recovery charge | Qrr | - 106.8 - | uC | VR=40V,IF=20A,diF/dt=200A/us |
| Peak reverse recovery current | Irrm | - -3.7 - | A | VR=40V,IF=20A,diF/dt=200A/us |
2410121609_ANHI-AUA060N08AG_C5440025.pdf
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