N Channel Silicon MOSFET ANHI AUB034N10 Designed for Hard Switching and High Speed DC DC Conversion
Key Attributes
Model Number:
AUB034N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
214A
RDS(on):
3.4mΩ
Operating Temperature -:
-55℃~+170℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
280pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
10nF@25V
Pd - Power Dissipation:
330W
Gate Charge(Qg):
138nC
Mfr. Part #:
AUB034N10
Package:
TO-263
Product Description
Product Overview
The AUP034N10 and AUB034N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They feature a low drain-source on-resistance (RDS(on) = 2.9m typ.), enhanced body diode dv/dt capability, and improved avalanche ruggedness. These MOSFETs are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors.
Product Attributes
- Product Type: Silicon N-Channel MOS
- Available Models: AUP034N10, AUB034N10
- Package Types: TO220, TO263
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS @ Tj,max | 100 | V | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | |
| Gate threshold voltage | V(GS)th | 2 - 4 | V | VDS=VGS, ID=250uA | |
| Zero gate voltage drain current | IDSS | - | 1 | uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on),max | 3.4 | m | ||
| Drain-source on-state resistance | RDS(on) | - 2.9 - 3.4 | m | VGS=10V, ID=80A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 2.6 - | f=1MHz, open drain | ||
| Continuous drain current at silicon | ID | - 214 | A | TC=25C | |
| Continuous drain current at package | ID | - 195 | A | TC=25C | |
| Continuous drain current at silicon | ID | 151 | A | TC=100C | |
| Pulsed drain current | ID,pulse | - 856 | A | TC=25C | |
| Avalanche energy, single pulse | EAS | - 512 | mJ | Tc=25,VDD=40V,Vgs=10V, L=1mH, RG=25 | |
| Avalanche current, single pulse | IAR | - 32 | A | Tc=25, VDD=40V, L=1mH, RG=25 | |
| Gate source voltage (static) | VGS | -20 - 20 | V | static | |
| Power dissipation | Ptot | - 330 | W | TC=25C | |
| Storage temperature | Tstg | -55 - 170 | C | ||
| Operating junction temperature | Tj | -55 - 170 | C | ||
| Soldering Temperature | TL | 300 | C | Distance of 1.6mm from case for 10s | |
| Thermal resistance, junction - case | RthJC | - - 0.46 | C/W | ||
| Thermal resistance, junction - ambient | RthJA | - - 63 | C/W | device on PCB, minimal footprint | |
| Input capacitance | Ciss | - 10000 - | pF | VGS=0V, VDS=25V, f=1MHz | |
| Output capacitance | Coss | - 2900 - | pF | VGS=0V, VDS=25V, f=1MHz | |
| Reverse transfer capacitance | Crss | - 280 - | pF | VGS=0V, VDS=25V, f=1MHz | |
| Turn-on delay time | td(on) | - 38 - | ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 | |
| Rise time | tr | - 50 - | ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 | |
| Turn-off delay time | td(off) | - 69 - | ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 | |
| Fall time | tf | - 33 - | ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 | |
| Gate to source charge | Qgs | - 58 - | nC | VDD=50V, ID=80A, VGS=10V | |
| Gate to drain charge | Qgd | - 44 - | nC | VDD=50V, ID=80A, VGS=10V | |
| Gate charge total | Qg | - 138 - | nC | VDD=50V, ID=80A, VGS=10V | |
| Continuous Source Current at silicon | ISD | - 214 - | A | ||
| Diode forward voltage | VSD | - 1.2 - | V | VGS=0V, Is=80A, Tj=25C | |
| Reverse recovery time | trr | - 95 - | ns | Vgs=0V, IF=80A, diF/dt=100A/s | |
| Reverse recovery charge | Qrr | - 143 - | nC | Vgs=0V, IF=80A, diF/dt=100A/s |
2410121525_ANHI-AUB034N10_C5440034.pdf
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