N Channel Silicon MOSFET ANHI ASU65R1K4E for Solar Inverter Telecom Power and Server Power Solutions
Key Attributes
Model Number:
ASU65R1K4E
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
4A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.2pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
238pF
Gate Charge(Qg):
5.76nC
Mfr. Part #:
ASU65R1K4E
Package:
TO-251
Product Description
Product Overview
The ASA65R1K4E is a Silicon N-Channel MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance (RDS(on)) and easy gate control, making it suitable for soft switching boost PFC, H-series resonance half-bridge, and phase-shift-bridge (ZVS) applications. Key applications include Telecom Power, EV Charging, Solar inverters, and Server Power. The MOSFET is available in TO220F, TO251, and TO252 packages.
Product Attributes
- Brand: Not specified
- Material: Silicon N-Channel MOS
- Mode: Enhancement mode
- Series: H Series
Technical Specifications
| Model | Package | VDS @ Tj,max (V) | RDS(on),max () | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ASA65R1K4E | TO220F | 700 | 1.4 | 5.76 | 12 |
| ASU65R1K4E | TO251 | 700 | 1.4 | 5.76 | 12 |
| ASD65R1K4E | TO252 | 700 | 1.4 | 5.76 | 12 |
| Parameter | Symbol | Unit | Value (Typ.) | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | V | 655 | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | V | 2.5 - 4.5 | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | nA | 100 | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | nA | 100 | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 1.24 | VGS=10V, ID=2A, Tj=25C | |
| Gate resistance | RG | 13.4 | f=1MHz, open drain | |
| Input capacitance | Ciss | pF | 238 | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | pF | 25 | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | pF | 4.2 | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | ns | 5.2 | VDD=400V,VGS=13V,ID=1.2A, RG=10 |
| Rise time | tr | ns | 22 | VDD=400V,VGS=13V,ID=1.2A, RG=10 |
| Turn-off delay time | td(off) | ns | 30.4 | VDD=400V,VGS=13V,ID=1.2A, RG=10 |
| Fall time | tf | ns | 25.2 | VDD=400V,VGS=13V,ID=1.2A, RG=10 |
| Gate to source charge | Qgs | nC | 0.4 | VDD=400V, ID=1.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | nC | 1.5 | VDD=400V, ID=1.2A, VGS=0 to 10V |
| Gate charge total | Qg | nC | 5.76 | VDD=400V, ID=1.2A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | V | 4.2 | VDD=400V, ID=1.2A, VGS=0 to 10V |
| Diode forward voltage | VSD | V | 0.79 | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | ns | 158 | VR=400V, IF=49.6A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | uC | 0.412 | VR=400V, IF=49.6A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | A | 5.92 | VR=400V, IF=49.6A, diF/dt=100A/s |
2410121605_ANHI-ASU65R1K4E_C19192892.pdf
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