1200V Silicon Carbide MOSFET Bestirpower BCW120N160W1 with High System Efficiency and Reduced Cooling
Key Attributes
Model Number:
BCW120N160W1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
22A
RDS(on):
160mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Pd - Power Dissipation:
126W
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
40nC
Mfr. Part #:
BCW120N160W1
Package:
TO-247-3L
Product Description
BCW120N160W1 1200V 160m Silicon Carbide Power MOSFET
The BCW120N160W1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power electronic applications. It offers a combination of high blocking voltage, low on-resistance, and high-speed switching capabilities, making it suitable for solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications. Key benefits include higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
- Package Type: TO-247-3L
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| VDSmax | Drain - Source Voltage | VGS=0V, ID=100A | 1200 | V |
| VGSmax | Gate - Source Voltage | Absolute maximum values | -8 / +22 | V |
| VGSop | Gate - Source Voltage | Recommended operational values | -5 / +18 | V |
| ID | Continuous Drain Current | VGS=18V, TC=25C | 22 | A |
| ID | Continuous Drain Current | VGS=18V, TC=100C | 16 | A |
| IDM | Pulse Drain Current | Pulse width limited by Tjmax | 58 | A |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to 175 | C | |
| RJC | Thermal Resistance, Junction to Case, Max. | 1.19 | /W | |
| RJA | Thermal Resistance, Junction to Ambient, Max. | 27.47 | /W | |
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID=100 A | 1200 | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=25C | 2.0 - 4.0 | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=175C | 2.7 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 10 - 100 | A |
| IGSS | Gate-Source Leakage Current | VGS = 18 V, VDS = 0 V | 10 - 200 | nA |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 10 A, TC = 25C | 125 - 180 | m |
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 10 A, TC = 25C | 160 - 190 | m |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 10 A, TC = 175C | 220 | m |
| gfs | Transconductance | VGS = 18 V, ID = 10 A, TJ = 25C | 7.0 | S |
| gfs | Transconductance | VGS = 18 V, ID = 10 A, TJ = 175C | 6.0 | S |
| Ciss | Input Capacitance | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | 550 | pF |
| Coss | Output Capacitance | 28 | pF | |
| Crss | Reverse Transfer Capacitance | 8 | pF | |
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 5 A, TJ = 25C | 3.5 | V |
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 5 A, TJ = 175C | 3.2 | V |
| IS | Continuous Diode Forward Current | TC = 25 | 30 | A |
| trr | Reverse Recovery time | VGS = -5V, ISD = 10 A, VR= 800V, dif / dt=1200A/s | 10 | ns |
| Qrr | Reverse Recovery Charge | 40 | nC | |
| Irrm | Peak Reverse Recovery Current | 3 | A | |
| EON | Turn-On Switching Energy | VDS=800V, VGS= -5/18V, ID= 10A, RG(ext) = 0, L= 256H | 200 | J |
| EOFF | Turn-Off Switching Energy | VDS=800V, VGS= -5/18V, ID= 10A, RG(ext) = 0 | 50 | J |
| td(on) | Turn-On Delay Time | VDS=800V, VGS= -5/18V, ID= 100A, RG(ext) = 0, Timing relative to VDS | 20 | ns |
| tr | Rise Time | 45 | ns | |
| td(off) | Turn-Off Delay Time | 20 | ns | |
| tf | Fall Time | 15 | ns | |
| RG(int) | Internal Gate Resistance | f= 1 MHz, VAC=25mV | 10.0 | |
| Qgs | Gate to Source Charge | VDD=800V, VGS= -5/18V, ID= 10A | 11 | nC |
| Qgd | Gate to Drain Charge | 8 | nC | |
| Qg | Total Gate Charge | 40 | nC |
Package Outlines
TO247-3L
Package Marking and Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCW120N160W1 | BCW120N160W1 | TO247-3L | Tube | 30 units |
2507111721_Bestirpower-BCW120N160W1_C42401700.pdf
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