Silicon N Channel MOSFET ANHI AUP074N10 Designed for Power Switching in LED and Display Applications
Key Attributes
Model Number:
AUP074N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
123A
RDS(on):
7.4mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.9V
Reverse Transfer Capacitance (Crss@Vds):
14.6pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
175W
Input Capacitance(Ciss):
3.68nF@50V
Gate Charge(Qg):
60.7nC
Mfr. Part #:
AUP074N10
Package:
TO-220
Product Description
AUP074N10 N-Channel MOSFET
The AUP074N10 is a Silicon N-Channel MOSFET designed for efficient power switching applications. It features a low drain-source on-resistance (RDS(ON) = 6.5m typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is ideal for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting solutions.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.4 - 3.4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 | uA (VDS=95V, VGS=0V, Tj=25C) |
| Gate-source leakage current | IGSS | - | 100 | nA (VGS=20V, VDS=0V) |
| Drain-source on-state resistance | RDS(on) | 6.5 - 7.4 | m | (VGS=10V, ID=20A, Tj=25C) |
| Gate resistance (Intrinsic) | RG | - | 1.2 | (f=1MHz, open drain) |
| Input capacitance | Ciss | - | 3680 | pF (VGS=0V, VDS=50V, f=1MHz) |
| Output capacitance | Coss | - | 361 | pF (VGS=0V, VDS=50V, f=1MHz) |
| Reverse transfer capacitance | Crss | - | 14.6 | pF (VGS=0V, VDS=50V, f=1MHz) |
| Turn-on delay time | td(on) | - | 29 | ns (VDD=50V,VGS=10V,ID=20A, RG=10) |
| Rise time | tr | - | 55 | ns (VDD=50V,VGS=10V,ID=20A, RG=10) |
| Turn-off delay time | td(off) | - | 69 | ns (VDD=50V,VGS=10V,ID=20A, RG=10) |
| Fall time | tf | - | 43 | ns (VDD=50V,VGS=10V,ID=20A, RG=10) |
| Gate to source charge | Qgs | - | 15.5 | nC (VDD=50V, ID=20A, VGS=0 to 10V) |
| Gate to drain charge | Qgd | - | 17.6 | nC (VDD=50V, ID=20A, VGS=0 to 10V) |
| Gate charge total | Qg | - | 60.7 | nC (VDD=50V, ID=20A, VGS=0 to 10V) |
| Diode forward voltage | VSD | - | 0.7 | V (VGS=0V, IF=1A, Tj=25C) |
| Reverse recovery time | trr | - | 45 | ns (VR=30V, IF=20A, diF/dt=300A/s) |
| Reverse recovery charge | Qrr | - | 212 | nC (VR=30V, IF=20A, diF/dt=300A/s) |
| Peak reverse recovery current | Irrm | - | 8.4 | A (VR=30V, IF=20A, diF/dt=300A/s) |
| Continuous drain current | ID | - | 123 | A (TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50) |
| Pulsed drain current | ID,pulse | - | 396 | A (TC=25C, Pulse width tp limited by Tj,max) |
| Avalanche energy, single pulse | EAS | - | 240 | mJ (Tc=25,VDD=50V, I=31A, L = 0.5mH, RG=25) |
| Avalanche current, single pulse | IAR | - | 31 | A (Tc=25,VDD=50V,L=0.5mH, RG=25) |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation | Ptot | - | 175 | W (TC=25C) |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Transconductance | GFS | - | 51 | S (VDS=5V IDS=20A) |
| Thermal resistance, junction - case | RthJC | - | 0.84 | C/W |
| Thermal resistance, junction - ambient | RthJA | - | 60 | C/W (device on PCB, minimal footprint) |
2410121538_ANHI-AUP074N10_C5440040.pdf
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