High speed power switching solution ANHI AUR020N10 Silicon N Channel MOSFET for SMPS and industrial
Key Attributes
Model Number:
AUR020N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
305A
RDS(on):
2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
477pF
Input Capacitance(Ciss):
14.994nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
213nC@10V
Mfr. Part #:
AUR020N10
Package:
TOLL-8L
Product Description
Product Overview
The AUR020N10 and AUW025N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance, enhanced body diode dv/dt capability, and improved avalanche ruggedness, contributing to efficient and reliable power management solutions.
Product Attributes
- Product Type: Silicon N-Channel MOS
- Part Numbers: AUR020N10, AUW025N10
Technical Specifications
| Parameter | Symbol | AUR020N10 (TOLL-8L) | AUW025N10 (TO247-3L) | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| Key Performance Parameters | |||||
| Drain-source breakdown voltage | VDS @ Tj,max | 100 | 100 | V | Tj = 25C, unless otherwise specified |
| RDS(on) max (TOLL) | RDS(on),max TOLL | 2.0 | - | m | Tj = 25C, unless otherwise specified |
| RDS(on) max (TO247) | RDS(on),max TO247 | - | 2.5 | m | Tj = 25C, unless otherwise specified |
| Gate Charge (typ.) | Qg,typ | 213 | 213 | nC | Tj = 25C, unless otherwise specified |
| Pulsed Drain Current | ID,pulse | 1000 | 1000 | A | TC=25C |
| Maximum Ratings | |||||
| Continuous drain current | ID | - | 305 | A | TC=25C, Limited by Tj,max, Max Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | 1000 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | 1176 | mJ | Tc=25,VDD=50V, Iav=68.6A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - | 68.6 | A | Tc=25,VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 to 20 | -20 to 20 | V | static |
| Power dissipation | Ptot | 375 | 375 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | -55 to 150 | C | |
| Soldering Temperature | TL | 260 | 260 | C | Distance of 1.6mm from case for 10s |
| Thermal Characteristics | |||||
| Thermal resistance, junction - case | RthJC | 0.33 | 0.33 | C/W | |
| Thermal resistance, junction - ambient | RthJA | 48 | 48 | C/W | device on PCB, minimal footprint |
| Static Characteristics | |||||
| Drain-source breakdown voltage | V(BR)DSS | 100 | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 to 4.5 | 2.5 to 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | 1 | uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (TOLL) | RDS(on) | 1.6 to 2.0 | - | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO247) | RDS(on) | - | 2.1 to 2.5 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 1.6 | 1.6 | f=1MHz, open drain | |
| Transconductance | Gfs | 138.4 | 138.4 | S | VDS=5V, ID=50A |
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 14994 | 14994 | pF | VGS=0V, VDS=35V, f=1MHz |
| Output capacitance | Coss | 1577 | 1577 | pF | VGS=0V, VDS=35V, f=1MHz |
| Reverse transfer capacitance | Crss | 477 | 477 | pF | VGS=0V, VDS=35V, f=1MHz |
| Turn-on delay time | td(on) | 35.5 | 35.5 | ns | VDD=50V,VGS=10V,ID=20A, RG=3 |
| Rise time | tr | 57.2 | 57.2 | ns | VDD=50V,VGS=10V,ID=20A, RG=3 |
| Turn-off delay time | td(off) | 112 | 112 | ns | VDD=50V,VGS=10V,ID=20A, RG=3 |
| Fall time | tf | 62 | 62 | ns | VDD=50V,VGS=10V,ID=20A, RG=3 |
| Gate Charge Characteristics | |||||
| Gate to source charge | Qgs | 60.6 | 60.6 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 50.7 | 50.7 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | 213 | 213 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 4.72 | 4.72 | V | VDD=50V, ID=20A, VGS=0 to 10V |
| Reverse Diode Characteristics | |||||
| Diode forward voltage | VSD | 0.67 to 1.2 | 0.67 to 1.2 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 84.44 | 84.44 | ns | VR=50V, IF=20A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 236 | 236 | nC | VR=50V, IF=20A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 4.31 | 4.31 | A | VR=50V, IF=20A, diF/dt=100A/s |
2410121522_ANHI-AUR020N10_C22470096.pdf
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