High speed switching N Channel MOSFET AUB062N08BG with rugged avalanche and enhanced diode features
Key Attributes
Model Number:
AUB062N08BG
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.2mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
24.24pF
Input Capacitance(Ciss):
3.73nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
55.7nC
Mfr. Part #:
AUB062N08BG
Package:
TO-263
Product Description
Product Overview
The AUA062N08BG series are N-Channel MOSFETs designed for synchronous rectification and hard switching applications. These devices are ideal for high-speed circuits, DC/DC converters, SMPS, telecom, and industrial applications. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche capability.
Product Attributes
- Brand: AUA
- Channel Type: N-Channel
Technical Specifications
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUA062N08BG | TO220F | N08BG | 85 | 6.2 | 55.7 | 240 |
| AUB062N08BG | TO263 | N08BG | 85 | 6.2 | 55.7 | 240 |
| AUP062N08BG | TO220 | N08BG | 85 | 6.2 | 55.7 | 240 |
| AUN062N08BG | DFN5x6 | N08BG | 85 | 6.2 | 55.7 | 240 |
| AUD062N08BG | TO252 | N08BG | 85 | 6.2 | 55.7 | 240 |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.5 - 3.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 5.6 - 6.2 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 1.2 | f=1MHz, open drain | |
| Input capacitance | Ciss | - 3730 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | - 674 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | - 24.24 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | - 16.5 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Rise time | tr | - 13.7 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Turn-off delay time | td(off) | - 35.9 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Fall time | tf | - 13.45 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Gate to source charge | Qgs | - 15.9 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qgd | - 13.3 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | - 55.7 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Diode forward voltage | VSD | - 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 40.9 | ns | VR=40V,IF=20A, diF/dt=200A/us |
| Reverse recovery charge | Qrr | - 106.8 | uC | VR=40V,IF=20A,diF/dt=200A/us |
| Peak reverse recovery current | Irrm | -3.7 | A | VR=40V,IF=20A,diF/dt=200A/us |
2410121609_ANHI-AUB062N08BG_C5440021.pdf
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