Low Capacitance Silicon Carbide MOSFET Bestirpower BCZ120N16M1 1200V Blocking Voltage for Power Supplies
Key Attributes
Model Number:
BCZ120N16M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
164A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
9.3pF
Output Capacitance(Coss):
255pF
Input Capacitance(Ciss):
6.413nF
Pd - Power Dissipation:
760W
Gate Charge(Qg):
70.5nC
Mfr. Part #:
BCZ120N16M1
Package:
TO-247-4L
Product Description
Product Overview
The BCZ120N16M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It features a high blocking voltage of 1200 V and a low on-resistance of 16 m, enabling system efficiency improvements and higher frequency applicability. With its high-speed switching capabilities, low capacitance, and inherent avalanche ruggedness, this MOSFET is easy to parallel and simple to drive, contributing to increased power density and reduced cooling efforts. Ideal for LED lighting power supplies, high voltage DC/DC converters, industrial power supplies, and HVAC systems.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TJ = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +25 | V | ||
| VGSop | Recommended Operation Value | -5 | +20 | V | ||
| ID | Drain Current | VGS = 20V, (TC = 25) | 164 | A | ||
| ID | Drain Current | VGS = 20 V, (TC = 100) | 116 | A | ||
| IDM | Drain Current Pulsed (Note1) | 328 | A | |||
| PD | Power Dissipation (TC = 25) | 760 | W | |||
| Derate Above 25 | 5 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.2 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100A | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +20 V, VDS = 0 V | 250 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 16 mA | 2.0 | 2.8 | 4.0 | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 16 mA, TJ = 175 | 1.8 | V | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 20 V, ID = 55 A | 16 | 25 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 20V, ID = 55 A, TJ = 175 | 28 | m | ||
| gfs | Transconductance | VGS = 20 V, ID = 55 A | 22.6 | S | ||
| gfs | Transconductance | VDS = 20 V, ID = 55 A, TJ = 175 | 24 | S | ||
| Ciss | Input Capacitance | VDS = 1000 V, VGS = 0 V, f = 700kHz, VAC=25mV | 6413 | pF | ||
| Coss | Output Capacitance | 255 | pF | |||
| Crss | Reverse Transfer Capacitance | 9.3 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 1000 V, VGS = 0 V | 152 | J | ||
| Qgs | Gate to Source Charge | VDS = 800 V, ID = 55A, VGS = -5 V / 20V | 70.5 | nC | ||
| Qgd | Gate to Drain Miller Charge | 117.3 | nC | |||
| Qg(tot) | Total Gate Charge | 315.4 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz, VAC = 25 mV | 1 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 800 V, ID = 55 A, VGS = -5V / 20 V, RG(ext)=2.2, L= 100H | 14 | ns | ||
| tr | Turn-On Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 39 | ns | |||
| tf | Turn-Off Fall Time | 17 | ns | |||
| Eon | Turn-on Switching Energy | 554 | J | |||
| Eoff | Turn-off Switching Energy | 223 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Diode Forward Current | VGS = -5 V, TC=25 | 159 | A | ||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 27 A | 3.6 | V | ||
| trr | Reverse Recovery Time | VGS=-5V, ISD=55A, VR=800V, dIF/dt =8620A/s | 25.5 | ns | ||
| Qrr | Reverse Recovery Charge | 2476 | nC | |||
| Irrm | Peak Reverse Recovery Current | 154.6 | A | |||
2512111635_Bestirpower-BCZ120N16M1_C53152746.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
