Super Junction Power MOSFET 650V Bestirpower BMB65N046UE1 with low switching losses and low gate charge
Key Attributes
Model Number:
BMB65N046UE1
Product Custom Attributes
Mfr. Part #:
BMB65N046UE1
Package:
D2PAK
Product Description
BMB65N046UE1: 650V, 46m Super Junction Power MOSFET
Product Overview
The BMB65N046UE1 is a high-performance Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve very low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling technology, providing advantages such as low EMI and reduced switching losses for designers. Its ultra-fast body diode and exceptional commutation ruggedness make it ideal for demanding applications.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Package Type: DPAK
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage(1) | TJ = 25 unless otherwise noted | 650 | V | ||
| VGS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current (VGS = 10 V, TC = 25) | 76 | A | |||
| ID | Drain Current (VGS = 10 V, TC = 100) | 48 | A | |||
| IDM | Drain Current Pulsed | 242 | A | |||
| EAS | Single Pulsed Avalanche Energy(3) | 375 | mJ | |||
| dv/dt | MOSFET dv/dt | 120 | V/ns | |||
| Peak Diode Recovery dv/dt | ||||||
| PD | Power Dissipation (TC = 25) | 500 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| IS | Continuous Diode Forward Current | 76 | A | |||
| ISM | Pulse Diode Pulse Current(2) | 242 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.25 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 26 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ=25C | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| V(GS)th | Gate Threshold Voltage | VGS = VDS, ID = 0.25 mA | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS=10 V, ID = 15 A | 41 | 46 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0 V,VDS = 100 V, f = 1 MHz | 5233 | pF | ||
| Coss | Output Capacitance | 112 | pF | |||
| Crss | Reverse transfer capacitance | 3.2 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | ID = 15 A, VDD = 480 V, VGS = 0 to 10 V | 138 | nC | ||
| Qgs | Gate to Source Charge | 33.7 | nC | |||
| Qgd | Gate to Drain Miller Charge | 52.3 | nC | |||
| RG | Gate Resistance | VDD= 0 V, VGS = 0 V,f = 1 MHz | 3.9 | |||
| td(on) | Turn-On Delay Time | VDD = 300 V, ID = 15 A, VGS = 10 V | 152 | ns | ||
| tr | Turn-On Rise Time | 25 | ns | |||
| td(off) | Turn-Off Delay Time | 483 | ns | |||
| tf | Turn-Off Fall Time | ns | ||||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF =15 A, TJ = 25 | 0.97 | V | ||
| trr | Reverse Recovery Time | VR = 50 V, IF = 15 A, diF/dt = 100 A/s | 163 | ns | ||
| Qrr | Reverse Recovery Charge | 0.9 | C | |||
| Irrm | Peak reverse recovery current | 8.6 | A | |||
Applications
- PC power
- Server power supply
- Telecom
- Solar inverter
- Super charger for automobiles
Package Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMB65N046UE1 | BMB65N046UE1 | D2PAK | Tape & Reel | 800 unit |
2601061650_Bestirpower-BMB65N046UE1_C53152694.pdf
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