Power transistor ANHI AGW75N65 featuring trench FS Cool Watt technology and fast recovery diode for UPS
Key Attributes
Model Number:
AGW75N65
Product Custom Attributes
Pd - Power Dissipation:
469W
Td(off):
211ns
Td(on):
71ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
3.91nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.6V
Gate Charge(Qg):
142nC
Operating Temperature:
-
Reverse Recovery Time(trr):
323ns
Switching Energy(Eoff):
2.57mJ
Turn-On Energy (Eon):
3.08mJ
Mfr. Part #:
AGW75N65
Package:
TO-247
Product Description
AGW75N65 Trench-FS Cool-Watt @ IGBT
Product Overview
The AGW75N65 is a Trench-FS Cool-Watt @ IGBT designed for inverter power supply and UPS applications. It features CoolWatt@ Trench-FS technology, offering low VCESAT and low switching losses. The device includes an anti-parallel fast recovery diode and a positive temperature coefficient for high reliability.Product Attributes
- Brand: AGW
- Technology: Cool-Watt@ Trench-FS
- Package: TO247
Technical Specifications
Key Performance Parameters
| Parameter | Value | Unit |
|---|---|---|
| VCES | 650 | V |
| VCE(sat) | 1.3 | V |
| VGE(th) | 5.6 | V |
| Qg,typ | 142 | nC |
| ICpuls | 225 | A |
Maximum Ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCES | - | - | 650 | V | TC=25C |
| DC collector current | IC | - | 150 | - | A | TC=25C |
| DC collector current | IC | - | 75 | - | A | TC=100C |
| Pulse collector current | ICpuls | - | - | 225 | A | Tvj150 |
| Repetitive peak reverse voltage | VRRM | - | - | 650 | V | TC=25C |
| Diode continuous forward current | IF | - | - | 150 | A | TC=25C |
| Diode continuous forward current | IF | - | - | 75 | A | TC=100C |
| Diode pulse current | IFpuls | - | - | 225 | A | Tvj150 |
| Gate-emitter voltage | VGE | -20 | - | 20 | V | static; -30 - 30 V Transienttp10uS,D0.01 |
| Power dissipation | Ptot | - | - | 469 | W | TC=25C |
| Storage temperature | Tstg | -50 | - | 150 | C | - |
| Operating junction temperature | Tj | -40 | - | 175 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
Thermal Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| IGBT thermal resistance junction - case | RthJC-IGBT | - | - | 0.32 | K/W | - |
| FRD thermal resistance junction - case | RthJC-FRD | - | - | 0.45 | K/W | - |
| Thermal resistance junction - ambient | RthJA | - | - | 40 | K/W | - |
Static Characteristics (Tj=25C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 650 | - | - | V | VGE = 0V,IC=0.25mA,Tvj=25 |
| Collector-emitter saturation voltage | VCE(sat) | - | 1.3 | 2 | V | VGE=15V, IC=30A, Tvj=25 |
| Collector-emitter saturation voltage | VCE(sat) | - | 1.85 | - | V | VGE=15V, IC=30A, Tvj=150 |
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.6 | 6.1 | V | VGE= VCE,IC=1.5mA,Tvj=25 |
| Diode forward voltage | VF | - | 1.35 | 1.85 | V | VGE= 0V,IF=30A, Tvj=25 |
| Diode forward voltage | VF | - | 1.2 | - | V | VGE= 0V,IF=30A,Tvj=150 |
| Zero collector voltage gate current | IGES | - | - | 200 | nA | VGE=30V,VCE=0V |
| Zero gate voltage collector current | ICES | - | - | 0.2 | mA | VCE =650V,VGE=0V, Tvj=25 |
| Zero gate voltage collector current | ICES | - | - | 1.0 | mA | VCE =650V,VGE=0V, Tvj=150 |
| Integrated gate resistor | RGin | 0 |
Dynamic Characteristics (Tvj=25C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | - | 3910 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Output capacitance | Coes | - | 244 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Reverse transfer capacitance | Cres | - | 34.0 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Gate charge | Qg | - | 142 | - | nC | VGE=0/15V,Vcc=400V,IC=75A,Tvj=25 |
| Gate-emitter charge | Qge | - | 34.6 | - | nC | VGE=0/15V,Vcc=400V,IC=75A,Tvj=25 |
| Gate-collector charge | Qgc | - | 63.0 | - | nC | VGE=0/15V,Vcc=400V,IC=75A,Tvj=25 |
| Gate-emitter plateau voltage | VGE(pl) | - | 9.65 | - | V | IC =75A,VCE=520V,VGE=0/15V,Tvj=25 |
Switching Characteristics (Tvj=25C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Turn-on delay time | Td(on) | 76.0 | ns | Vcc=400V,Ic=75A, Ron=10, Roff=10, Cge=0nF,VGE=0/15V, Lload=60uH,Tvj=25 | ||
| Rise time | Tr | 115 | ns | - | ||
| Turn-off delay time | Td(off) | 196 | ns | - | ||
| Fall time | tf | 79.0 | ns | - | ||
| Turn-on energy | Eon | 3.08 | mJ | - | ||
| Turn-off energy | Eoff | 2.22 | mJ | - | ||
| Total switch energy | Etotal | 5.30 | mJ | - |
Switching Characteristics (Tvj=150C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Turn-on delay time | Td(on) | 71.0 | ns | Vcc=400V,Ic=75A, Ron=10, Roff=10, Cge=0nF,VGE=0/15V, Lload=60uH,Tvj=150 | ||
| Rise time | Tr | 120 | ns | - | ||
| Turn-off delay time | Td(off) | 211 | ns | - | ||
| Fall time | tf | 82.0 | ns | - | ||
| Turn-on energy | Eon | 5.21 | mJ | - | ||
| Turn-off energy | Eoff | 2.57 | mJ | - | ||
| Total switch energy | Etotal | 7.78 | mJ | - |
Diode Characteristics (Tvj=25C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Reverse recovery energy | Erec | 301 | uJ | IF =75A,VR=400V, VGE =0/15V,RON=10,Tvj=25 | ||
| Diode reverse recovery time | trr | 207 | nS | - | ||
| Diode reverse recovery charge | Qrr | 1355 | nC | - | ||
| Diode peak reverse recovery current | Irrm | 18.6 | A | - | ||
| Diode peak rate of fall of reverse Recovery current during trr | dirr/dt | 119 | A/uS | - |
Diode Characteristics (Tvj=150C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Reverse recovery energy | Erec | 991 | uJ | IF =75A,VR=400V, VGE =0/15V,RON=10,Tvj=150 | ||
| Diode reverse recovery time | trr | 323 | nS | - | ||
| Diode reverse recovery charge | Qrr | 4812 | nC | - | ||
| Diode peak reverse recovery current | Irrm | 34.7 | A | - | ||
| Diode peak rate of fall of reverse Recovery current during trr | dirr/dt | 184 | A/uS | - |
Package Outline
PGTO247(HT)
2410121642_ANHI-AGW75N65_C7494995.pdf
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