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quality High Speed Switching N Channel MOSFET AUN060N08AG Suitable for DC DC Converters SMPS and Telecom Circuits factory
quality High Speed Switching N Channel MOSFET AUN060N08AG Suitable for DC DC Converters SMPS and Telecom Circuits factory

High Speed Switching N Channel MOSFET AUN060N08AG Suitable for DC DC Converters SMPS and Telecom Circuits

Key Attributes
Model Number: AUN060N08AG
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ
Gate Threshold Voltage (Vgs(th)):
2.95V
Reverse Transfer Capacitance (Crss@Vds):
24.24pF
Pd - Power Dissipation:
74W
Input Capacitance(Ciss):
3.73nF
Gate Charge(Qg):
55.7nC
Mfr. Part #:
AUN060N08AG
Package:
DFN5x6-8
Product Description

Product Overview

The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and hard switching applications in SMPS, telecom, and industrial sectors. These devices feature low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche ruggedness, making them suitable for DC/DC converters and high-speed circuits. Available in various packages including TO220F, TO263, TO220, DFN5x6, and TO252.

Product Attributes

  • Brand: AUA
  • Channel Type: N-Channel
  • Technology: Silicon
  • Application: Synchronous Rectification, Hard Switching, DC/DC Converters, SMPS, Telecom, Industrial

Technical Specifications

Part Name Package VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Internal Circuit Marking
AUA060N08AG TO220F 80 6.0 55.7 240 N08AG AUA060N08AG
AUB060N08AG TO263 80 6.0 55.7 240 N08AG AUB060N08AG
AUP060N08AG TO220 80 6.0 55.7 240 N08AG AUP060N08AG
AUN060N08AG DFN5x6 80 6.0 55.7 240 N08AG AUN060N08AG
AUD060N08AG TO252 80 6.0 55.7 240 N08AG AUD060N08AG
Parameter Symbol Values Unit Note / Test Condition
Maximum Ratings
Continuous drain current ID - 60 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - 240 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - 300 mJ
Gate source voltage (static) VGS -20 - 20 V static
Power dissipation (TO220F) Ptot - 30 W TC=25C
Power dissipation (TO263&TO220&TO252) Ptot - 150 W TC=25C
Power dissipation (DFN5x6) Ptot - 74 W TC=25C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Thermal Characteristics (TO220F)
Thermal resistance, junction - case RthJC - - 5 C/W
Thermal resistance, junction - ambient RthJA - - 60 C/W device on PCB, minimal footprint
Thermal Characteristics (TO263&TO220&TO252)
Thermal resistance, junction - case RthJC - - 1 C/W
Thermal resistance, junction - ambient RthJA - - 62 C/W device on PCB, minimal footprint
Thermal Characteristics (DFN5x6)
Thermal resistance, junction - case RthJC - - 1.7 C/W
Thermal resistance, junction - ambient RthJA - - 50 C/W device on PCB, minimal footprint
Electrical Characteristics at Tj=25C
Drain-source breakdown voltage V(BR)DSS 80 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.5 3.4 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1000 nA VDS=80V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) - 5.4 6.0 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG - 1.2 f=1MHz, open drain
Dynamic Characteristics
Input capacitance Ciss - 3730 pF Vds=40V,Vgs=0V f=1MHz
Output capacitance Coss - 674 pF Vds=40V,Vgs=0V f=1MHz
Reverse transfer capacitance Crss - 24.24 pF Vds=40V,Vgs=0V f=1MHz
Turn-on delay time td(on) - 16.5 ns VDD=40V,VGS=10V,RG=10 ID=20A
Rise time tr - 13.7 ns VDD=40V,VGS=10V,RG=10 ID=20A
Turn-off delay time td(off) - 35.9 ns VDD=40V,VGS=10V,RG=10 ID=20A
Fall time tf - 13.45 ns VDD=40V,VGS=10V,RG=10 ID=20A
Gate Charge Characteristics
Gate to source charge Qgs - 15.9 nC VDS=40V,VGS=0 to 10V ID=20A
Gate to drain charge Qgd - 13.3 nC VDS=40V,VGS=0 to 10V ID=20A
Gate charge total Qg - 55.7 nC VDS=40V,VGS=0 to 10V ID=20A
Reverse Diode Characteristics
Diode forward voltage VSD - 0.7 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 40.9 ns VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge Qrr - 106.8 uC VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current Irrm - -3.7 A VR=40V,IF=20A,diF/dt=200A/us

Package Outlines

  • PG-TO220F
  • PG-TO263
  • PG-TO220
  • PG-TO252
  • PG-DFN5x6

2410121609_ANHI-AUN060N08AG_C5440024.pdf

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