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quality Power Management MOSFET ANPEC APM4500AKC-TRG Dual N Channel and P Channel with Lead Free Compliance factory
quality Power Management MOSFET ANPEC APM4500AKC-TRG Dual N Channel and P Channel with Lead Free Compliance factory

Power Management MOSFET ANPEC APM4500AKC-TRG Dual N Channel and P Channel with Lead Free Compliance

Key Attributes
Model Number: APM4500AKC-TRG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
740pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
APM4500AKC-TRG
Package:
SOP-8
Product Description

Product Overview

The APM4500AK is a Dual Enhancement Mode MOSFET featuring both N-Channel and P-Channel configurations. It is designed for power management in applications such as notebook computers, portable equipment, and battery-powered systems. Key advantages include a super high dense cell design, reliability, and ruggedness. The device is available in lead-free and green (RoHS compliant) versions.

Product Attributes

  • Brand: ANPEC
  • Model: APM4500AK
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available
  • Package Type: SOP-8

Technical Specifications

Feature N-Channel P-Channel Unit
Drain-Source Voltage (VDSS) 20 -20 V
Gate-Source Voltage (VGSS) 12 V
Continuous Drain Current (ID*) 8 -4.3 A
Pulsed Drain Current (IDM*) 30 -16 A
Diode Continuous Forward Current (IS*) 2.5 -2 A
Maximum Junction Temperature (TJ) 150 C
Storage Temperature Range (TSTG) -55 to 150 C
Power Dissipation (PD*) TA=25C 2.5 W
Power Dissipation (PD*) TA=100C 0.8 W
Thermal Resistance-Junction to Ambient (RJA*) 62.5 C/W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, IDS=250A (N-Ch) / IDS=-250A (P-Ch) 20 -20 V
Zero Gate Voltage Drain Current (IDSS) VDS=16V, VGS=0V, TJ=85C (N-Ch) / VDS=-16V, VGS=0V, TJ=85C (P-Ch) - 30 A - -30 A A
Gate Threshold Voltage (VGS(th)) VDS=VGS, IDS=250A (N-Ch) / IDS=-250A (P-Ch) 0.5 - 1 -0.5 - -1 V
Gate Leakage Current (IGSS) VGS=10V, VDS=0V 10 A
Drain-Source On-State Resistance (RDS(ON)) VGS=4.5V, IDS=8A (N-Ch) / VGS=-4.5V, IDS=-4.3A (P-Ch) 22 - 26 m 80 - 90 m m
Drain-Source On-State Resistance (RDS(ON)) VGS=2.5V, IDS=5.2A (N-Ch) / VGS=-2.5V, IDS=-2A (P-Ch) 30 - 36 m 105 - 115 m m
Diode Forward Voltage (VSD) ISD=2.5A, VGS=0V (N-Ch) / ISD=-2A, VGS=0V (P-Ch) - 0.8 - 1.3 V - -0.7 - -1.3 V V
Reverse Recovery Time (trr) - 15 - ns - 22 - ns ns
Reverse Recovery Charge (qrr) - 7 - nC - 6 - nC nC
Gate Resistance (RG) - 4 - - 9 -
Input Capacitance (Ciss) - 740 - pF - 565 - pF pF
Output Capacitance (Coss) - 160 - pF - 125 - pF pF
Reverse Transfer Capacitance (Crss) - 125 - pF - 95 - pF pF
Turn-on Delay Time (td(ON)) - 5 - 10 - 6 - 12 ns
Turn-on Rise Time (tr) - 7 - 21 - 13 - 24 ns
Turn-off Delay Time (td(OFF)) - 40 - 73 - 34 - 62 ns
Turn-off Fall Time (tf) - 23 - 42 - 32 - 59 ns
Total Gate Charge (Qg) - 10 - 13 nC - 6 - 8 nC nC
Gate-Source Charge (Qgs) - 1 - nC - 1 - nC nC
Gate-Drain Charge (Qgd) - 4 - nC - 2.2 - nC nC

Note: Surface Mounted on 1in pad area, t 10sec.

Note: Guaranteed by design, not subject to production testing.


2410121715_ANPEC-APM4500AKC-TRG_C368568.pdf

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