Power MOSFET ARK micro DMD6014E 600V N Channel device featuring fast switching speed and enhanced ESD protection
Key Attributes
Model Number:
DMD6014E
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
80mA
RDS(on):
150Ω@0V,50mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
62pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
-
Mfr. Part #:
DMD6014E
Package:
TO-252
Product Description
Product Overview
The ARK Microelectronics DMD6014E is a 600V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a normally-on characteristic, and proprietary advanced planar technology. It offers a rugged polysilicon gate cell structure and fast switching speed, making it suitable for applications such as normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Product Code: DMD6014E
- Package: TO-252
- Marking: 6014
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | -- | -- | V | VGS=-5V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 1 | A | VDS=600V, VGS=-5V |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 100 | A | VDS=600V, VGS= -5V TJ=125 |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | A | VGS=+20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -20 | VGS=-20V, VDS=0V | |
| Saturated Drain-to-Source Current | IDSS | 100 | -- | -- | mA | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 110 | 150 | VGS=0V, ID=50mA[3] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -- | -1.5 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 77 | -- | mS | VDS=10V, ID=5mA |
| Input Capacitance | Ciss | -- | 62 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Output Capacitance | Coss | -- | 13 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | Crss | -- | 9 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Total Gate Charge | Qg | -- | 8 | -- | nC | VGS=-5V~5V VDS=300V ID=7mA |
| Gate-to-Source Charge | Qgs | -- | 0.6 | -- | nC | VGS=-5V~5V VDS=300V ID=7mA |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 3 | -- | nC | VGS=-5V~5V VDS=300V ID=7mA |
| Turn-on Delay Time | td(on) | -- | 10 | -- | nS | VGS=-5V~5V VDD=300V ID=7mA RG=20 |
| Rise Time | trise | -- | 22 | -- | nS | VGS=-5V~5V VDD=300V ID=7mA RG=20 |
| Turn-off Delay Time | td(off) | -- | 35 | -- | nS | VGS=-5V~5V VDD=300V ID=7mA RG=20 |
| Fall Time | tfall | -- | 210 | -- | nS | VGS=-5V~5V VDD=300V ID=7mA RG=20 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=100mA, VGS=-10 V |
2410121501_ARK-micro-DMD6014E_C19184453.pdf
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