depletion mode power MOSFET ARK micro DMS4022E with low on resistance and 0.24A continuous drain current
Key Attributes
Model Number:
DMS4022E
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
240mA
RDS(on):
25Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
5.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
103.2pF
Output Capacitance(Coss):
17.7pF
Pd - Power Dissipation:
1.5W
Mfr. Part #:
DMS4022E
Package:
SOT-223
Product Description
ARK Microelectronics DMX4022E/DMS4022E Depletion-Mode Power MOSFET
The DMX4022E and DMS4022E are depletion-mode (normally on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology. These devices offer a small package, low leakage current, and are suitable for various applications including transient protection, start-up circuits, converters, normally on switches, LED drive circuits, power supplies, and current/voltage sources. They are RoHS compliant and available in Halogen-free versions.
Product Attributes
- Brand: ARK Microelectronics
- Origin: China
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Marking | Drain-to-Source Voltage (VDSX) | Static Drain-to-Source On-Resistance (RDS(ON) Max.) | Continuous Drain Current (ID) |
|---|---|---|---|---|---|
| DMX4022E | SOT-89 | 4022 | 400V | 25 | 0.20A |
| DMS4022E | SOT-223 | 4022 | 400V | 25 | 0.24A |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSX | 400 | -- | -- | V | VGS=-5V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 1 | A | VDS=400VVGS=-5V |
| Drain-to-Source Leakage Current (TJ=125) | ID(OFF) | -- | -- | 1 | mA | VDS=400VVGS=-5V TJ=125 |
| Gate-to-Source Leakage Current (VGS=+20V) | IGSS | -- | -- | 5 | A | VGS=+20V, VDS=0V |
| Gate-to-Source Leakage Current (VGS=-20V) | IGSS | -- | -- | -5 | VGS=-20V, VDS=0V | |
| Saturated Drain-to-Source Current | IDSS | 0.2 | -- | -- | A | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 12 | 25 | VGS=0VID=200mA | |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 11 | 23 | VGS=10VID=200mA | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -- | -1.5 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 193 | -- | mS | VDS=10V, ID=200mA |
| Input Capacitance | CISS | -- | 103.2 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Output Capacitance | COSS | -- | 17.7 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | CRSS | -- | 5.2 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Total Gate Charge | QG | -- | 359.6 | -- | nC | VGS=-5V~5V VDD=100V, ID=200mA |
| Gate-to-Source Charge | QGS | -- | 61.6 | -- | nC | VGS=-5V~5V VDD=100V, ID=200mA |
| Gate-to-Drain (Miller) Charge | QGD | -- | 130 | -- | nC | VGS=-5V~5V VDD=100V, ID=200mA |
| Turn-on Delay Time | td(ON) | -- | 6.6 | -- | ns | VGS=-5V~5V VDD=100V, ID=200mA RG=10 |
| Rise Time | trise | -- | 9.2 | -- | ns | VGS=-5V~5V VDD=100V, ID=200mA RG=10 |
| Turn-off Delay Time | td(OFF) | -- | 18.8 | -- | ns | VGS=-5V~5V VDD=100V, ID=200mA RG=10 |
| Fall Time | tfall | -- | 356 | -- | ns | VGS=-5V~5V VDD=100V, ID=200mA RG=10 |
| Diode Forward Voltage | VSD | -- | 0.8 | 1.5 | V | ISD=200mA ,VGS=-10V |
2410121502_ARK-micro-DMS4022E_C3031420.pdf
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