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quality Power MOSFET ANHI ASA65R300E N Channel Device with High Breakdown Voltage and Low Gate Charge factory
quality Power MOSFET ANHI ASA65R300E N Channel Device with High Breakdown Voltage and Low Gate Charge factory

Power MOSFET ANHI ASA65R300E N Channel Device with High Breakdown Voltage and Low Gate Charge

Key Attributes
Model Number: ASA65R300E
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
15A
RDS(on):
300mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.11pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.02nF@50V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
22.94nC
Mfr. Part #:
ASA65R300E
Package:
TO-220F
Product Description

Product Overview

The ASA65R300E and ASD65R300E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance and easy gate control, making them ideal for boost PFC switches and various flyback topologies including HB, AHB, and LLC. They are well-suited for power supplies in PCs, PD adapters, LCD/PDP TVs, LED lighting, server power, and UPS systems. The devices offer a high drain-source breakdown voltage of 650V and a low typical on-resistance of 0.278.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Type: N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Model Package VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Drain-source breakdown voltage (V) Gate threshold voltage (V) RDS(on) () Input Capacitance (pF) Output Capacitance (pF) Reverse Transfer Capacitance (pF) Gate to Source Charge (nC) Gate to Drain Charge (nC) Gate Charge Total (nC) Diode Forward Voltage (V) Reverse Recovery Time (ns) Reverse Recovery Charge (uC) Peak Reverse Recovery Current (A)
ASA65R300E TO220F 700 300 22.94 45 655 2.8 - 4.2 0.278 - 0.30 1020 108 5.11 5.7 13.6 22.94 0.74 216 1.3 16.7
ASD65R300E TO252 700 300 22.94 45 655 2.8 - 4.2 0.278 - 0.30 1020 108 5.11 5.7 13.6 22.94 0.74 216 1.3 16.7
A A mJ V/ns V V W W V/ns nA nA nC nC V
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID -15 TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse -45 TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS -500 Tc=25, VDD=50V, L=10mH, RG=25
MOSFET dv/dt ruggedness dv/dt -124 VDS=0...400V
Gate source voltage (static) VGS -20 to 20 static
Gate source voltage (dynamic) VGS -30 to 30 AC (f>1 Hz)
Power dissipation (TO220F) Ptot -32 TC=25C
Power dissipation (TO252) Ptot -118 TC=25C
Storage temperature Tstg -55 to 150 C
Operating junction temperature Tj -55 to 150 C
Reverse diode dv/dt dv/dt -15 VDS=0...400V, ISD<=IS, Tj=25C
Thermal resistance, junction - case (TO220F) RthJC 3.9 C/W
Thermal resistance, junction - ambient (TO220F) RthJA 80 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO252) RthJC 1.06 C/W
Thermal resistance, junction - ambient (TO252) RthJA 62 C/W device on PCB, minimal footprint
Zero gate voltage drain current IDSS -100 VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS -100 VGS=30V, VDS=0V
Gate resistance (Intrinsic) RG 5.7 f=1MHz, open drain
Turn-on delay time td(on) 8.4 ns VDD=400V, ID=3.8A, RG=10
Rise time tr 21.2 ns VDD=400V, ID=3.8A, RG=10
Turn-off delay time td(off) 32.4 ns VDD=400V, ID=3.8A, RG=10
Fall time tf 20.8 ns VDD=400V, ID=3.8A, RG=10
Gate to source charge Qgs 5.7 VDD=400V, ID=3.8A, VGS=10V
Gate to drain charge Qgd 13.6 VDD=400V, ID=3.8A, VGS=10V
Gate plateau voltage Vplateau 5.4 VDD=400V, ID=3.8A, VGS=10V

2410121609_ANHI-ASA65R300E_C5440001.pdf

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