150V Depletion Mode MOSFET ARK micro DMZ12C15A Suitable for Telecom and Surge Protection Solutions
Key Attributes
Model Number:
DMZ12C15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
100mA
RDS(on):
25Ω@0V,50mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
6.5pF
Output Capacitance(Coss):
12.8pF
Input Capacitance(Ciss):
33.2pF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
1.1nC
Mfr. Part #:
DMZ12C15A
Package:
SOT-23
Product Description
Product Overview
The DMZ12C15A is a 150V Depletion-Mode Power MOSFET from ARK Microelectronics. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering fast switching speeds. This normally-on device is suitable for various applications including new energy vehicles, industrial automation, surge protection, non-isolated linear power supplies, normally-on switches, linear amplifiers, constant current sources, and telecom.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: DMZ12C15A
- Package: SOT-23
- Marking: 12C15
- Certifications: Halogen-free Available
- Origin: Chengdu, Sichuan (implied by address)
Technical Specifications
| Symbol | Parameter | DMZ12C15A Unit | Min. | Typ. | Max. | Test Conditions |
| VDSX | Drain-to-Source Voltage | V | 150 | -- | -- | [1] |
| VDGX | Drain-to-Gate Voltage | V | 150 | -- | -- | [1] |
| ID | Continuous Drain Current | A | -- | 0.1 | -- | |
| IDM | Pulsed Drain Current | A | -- | 0.4 | -- | [2] |
| PD | Power Dissipation | W | -- | 0.50 | -- | |
| VGS | Gate-to-Source Voltage | V | -- | 20 | -- | |
| TL | Soldering Temperature | -- | 300 | -- | Distance of 1.6mm from case for 10 seconds | |
| TJ and TSTG | Operating and Storage Temperature Range | -55 | -- | 150 | ||
| RJA | Thermal Resistance, Junction-to-Ambient | K/W | -- | 250 | -- | |
| BVDSX | Drain-to-Source Breakdown Voltage | V | 150 | -- | -- | VGS=-10V, ID=250A |
| RDS(ON) (MAX.) | Static Drain-to-Source On-Resistance | -- | 14 | 25 | VGS=0V, ID=50mA[3] | |
| IDSS (MIN.) | Saturated Drain-to-Source Current | mA | 100 | -- | -- | VGS=0V, VDS=25V |
| VGS(OFF) | Gate-to-Source Cut-off Voltage | V | -2.5 | -- | -5.0 | VDS=3V, ID=8A |
| gfs | Forward Transconductance | mS | -- | 85 | -- | VDS=10V, ID=50mA |
| CISS | Input Capacitance | pF | -- | 33.2 | -- | VGS=-10V, VDS=25V, f=1.0MHz |
| COSS | Output Capacitance | pF | -- | 12.8 | -- | |
| CRSS | Reverse Transfer Capacitance | pF | -- | 6.5 | -- | |
| QG | Total Gate Charge | nC | -- | 1.1 | -- | VGS=-10V~5V, VDD=25V, ID=80mA |
| QGS | Gate-to-Source Charge | nC | -- | 0.6 | -- | |
| QGD | Gate-to-Drain (Miller) Charge | nC | -- | 0.2 | -- | |
| td(on) | Turn-on Delay Time | ns | -- | 6.4 | -- | VGS=-10V~0V, VDD=25V, ID=80mA, RG=10 |
| trise | Rise Time | ns | -- | 4.8 | -- | |
| td(off) | Turn-off Delay Time | ns | -- | 5.6 | -- | |
| tfall | Fall Time | ns | -- | 35.2 | -- | |
| ID(OFF) | Drain-to-Source Leakage Current | nA | -- | -- | 200 | VDS=150V, VGS=-10V |
| ID(OFF) | Drain-to-Source Leakage Current | uA | -- | -- | 100 | VDS=150V, VGS=-10V, TJ=125 |
| IGSS | Gate-to-Source Leakage Current | nA | -- | -- | 100 | VGS=20V, VDS=0V |
[1] Pulse width300s, duty cycle2%
[2] Pulse width380s; duty cycle2%.
[3] Pulse width380s; duty cycle2%.
2410121530_ARK-micro-DMZ12C15A_C19184463.pdf
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