N Channel Depletion Mode MOSFET ARK micro DMS8550E 850V with Compact Package and High Voltage Rating
Key Attributes
Model Number:
DMS8550E
Product Custom Attributes
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
120mA
RDS(on):
100Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Output Capacitance(Coss):
12.3pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
114.6pF
Gate Charge(Qg):
4.5nC
Mfr. Part #:
DMS8550E
Package:
SOT-223
Product Description
ARK Microelectronics DMS8550E - 850V N-Channel Depletion-Mode Power MOSFET
The ARK Microelectronics DMS8550E is an 850V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a high breakdown voltage, and a small SOT-223 package. Utilizing proprietary advanced planar technology and a rugged polysilicon gate cell structure, this device is suitable for applications such as solid-state relays, linear amplifiers, telecommunications, battery-operated systems, power supplies, current regulators, and converters.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: DMS8550E
- Package: SOT-223
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSX | 850 | -- | -- | V | VGS=-10V, ID=250A |
| Continuous Drain Current | ID | -- | -- | 0.12 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 0.48 | A | [2] |
| Power Dissipation | PD | -- | -- | 1.5 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 10 | A | VDS=850V, VGS=-10V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | A | VGS=20V, VDS=0V |
| Saturated Drain-to-Source Current | IDSS | 30 | -- | -- | mA | VGS=0V, VDS=50V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 45 | 100 | VGS=0V, ID=20mA [3] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -4.0 | -- | -1.2 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 80 | -- | mS | VDS=20V, ID=20mA |
| Input Capacitance | Ciss | -- | 114.6 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Output Capacitance | Coss | -- | 12.3 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 3.4 | -- | pF | VGS=-10V, VDS=50V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 4.5 | -- | nC | VGS=-10V~10V, VDS=50V, ID=50mA |
| Gate-to-Source Charge | Qgs | -- | 1.5 | -- | nC | VGS=-10V~10V, VDS=50V, ID=50mA |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 1.3 | -- | nC | VGS=-10V~10V, VDS=50V, ID=50mA |
| Turn-on Delay Time | td(on) | -- | 10.2 | -- | ns | VGS=-10V~0V, VDD=50V, ID=50mA, RG=10 |
| Rise Time | trise | -- | 10.3 | -- | ns | VGS=-10V~0V, VDD=50V, ID=50mA, RG=10 |
| Turn-off Delay Time | td(off) | -- | 33.5 | -- | ns | VGS=-10V~0V, VDD=50V, ID=50mA, RG=10 |
| Fall Time | tfall | -- | 130 | -- | ns | VGS=-10V~0V, VDD=50V, ID=50mA, RG=10 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=20mA, VGS=-10V |
2410121522_ARK-micro-DMS8550E_C22371818.pdf
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