Silicon N Channel MOSFET ASA70R380E with Easy Gate Switching and Low Drain Source On Resistance
Key Attributes
Model Number:
ASA70R380E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
11A
RDS(on):
350mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
901pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASA70R380E
Package:
TO-220F
Product Description
Product Overview
The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Mode: Enhancement mode
- Gate Switching: Easy to control
Technical Specifications
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ASA70R380E | TO220F | 750 | 380 | 22 | 33 |
| ASD70R380E | TO252 | 750 | 380 | 22 | 33 |
| ASB70R380E | TO263 | 750 | 380 | 22 | 33 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 705 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.346 - 0.38 | VGS=10V,ID=5.5A,Tj=25C | |
| Gate resistance | RG | 11.2 | f=1MHz, open drain | |
| Input capacitance | Ciss | 901 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 59 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 5.3 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 7.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Rise time | tr | 20.8 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Turn-off delay time | td(off) | 29.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Fall time | tf | 19.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Gate to source charge | Qgs | 5.8 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 17 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate charge total | Qg | 22 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 5.3 | V | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.74 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 250 | ns | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2.572 | uC | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 19.6 | A | VR=400V, IF=4.8 A, diF/dt=100A/s |
2410121538_ANHI-ASA70R380E_C5440005.pdf
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