AOS AIP3D15A060Q4T intelligent power module designed for AC motor drives including air conditioners and fan motors

Key Attributes
Model Number: AIP3D15A060Q4T
Product Custom Attributes
Mfr. Part #:
AIP3D15A060Q4T
Product Description

Product Overview

The AIP3D15A060Q4T and AIP3P15A060Q4T are intelligent power modules (IPMs) designed for 3-phase inverter applications. These modules feature Trench Shielded Planar Gate IGBTs with a 600V-15A rating. The AIP3P15A060Q4T variant includes an optional built-in PFC diode with low VF and ultra-fast recovery characteristics. Key integrated protections include control supply under-voltage lockout (UVLO), controllable over-temperature protection (OT), temperature monitoring (VOT), short-circuit current protection (CSC), and a controllable fault out signal (VCF). They also offer an enable input functionality for shutting down low-side IGBTs. The input interface supports 3 and 5V lines with Schmitt trigger receiver circuits. These modules are suitable for AC 100-240Vrms class low power motor drives, including air conditioners, washing machines, compressors, and fan motors.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Product Type: Intelligent Power Module (IPM)
  • Package Type: Dual-In-Line Package
  • Certifications: RoHS compliant, AOS Green Products (reduced Halogens)

Technical Specifications

Model External View Size (mm) Features Temperature Range (C) Package Terminal Type Isolation Rating (Vrms/min)
AIP3D15A060Q4T 38 x 24 x 3.6 3-phase inverter module, 600V-15A (Trench Shielded Planar Gate IGBT), Built-in bootstrap diodes, UVLO, OT, VOT, CSC, VCF, Enable input. -40 to 150 IPM-3E Long with stopper 2000
AIP3P15A060Q4T 38 x 24 x 3.6 3-phase inverter module with optional built-in PFC diode, 600V-15A (Trench Shielded Planar Gate IGBT), Low VF and Ultra-fast recovery diode for PFC, Built-in bootstrap diodes, UVLO, OT, VOT, CSC, VCF, Enable input. -40 to 150 IPM-3F Long with stopper 2000
Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Inverter VPN Supply Voltage Applied between P - NU,NV,NW 450 V
Inverter VPN(surge) Supply Voltage Applied between P - NU,NV,NW 500 V
VCES Collector-Emitter Voltage 600 V
IC Output Phase Current TC=25C, TJ<150C 15 A
IC Output Phase Current TC=80C, TJ<150C 10 A
IPK Output Peak Phase Current TC=25C, less than 1ms pulse width 30 A
tSC Short Circuit Withstand Time VPN400V, TJ=150C, VDD=15V 5 s
PC Collector Dissipation TC=25C, per chip 33 W
TJ Operating Junction Temperature -40 150 C
PFC Diode VRRM Repetitive peak Reverse Voltage Applied between P2 P3 650 V
PFC Diode IF Output Phase Current TC=25C, TJ<150C 30 A
PFC Diode IF Output Phase Current TC=100C, TJ<150C 15 A
VDD Control Supply Voltage Applied between VDD-COM 25 V
VDB High-Side Control Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 25 V
VIN Input Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) COM VDD+0.3 V
VCF Fault Output Supply Voltage Applied between VCF-COM COM+5.5 V
ICF Fault Output Current Sink current at VCF terminal 1 mA
VSC Current Sensing Input Voltage Applied between CSC-COM COM+5.5 V
VOT Temperature Output Applied between VOT-COM COM+5.5 V
TC Module Case Operation Temperature Measurement point of TC is provided in Figure 1 -30 125 C
TSTG Storage Temperature -40 150 C
VISO Isolation Voltage 60Hz, sinusoidal, AC 1min, between connected all pins and heat sink plate 2000 Vrms
Thermal Resistance
Rth(j-c)Q Junction to Case Thermal Resistance (1) Inverter IGBT (per 1/6 module) 3.8 K/W
Rth(j-c)F Inverter FWD (per 1/6 module) 4.97 K/W
Rth(j-c)D PFC Diode (AIP3P15A060Q4T) 2.58 K/W
Electrical Characteristics
VCE(SAT) Collector-Emitter Saturation Voltage VDD=VDB=15V, VIN=5V, IC=7.5A, TJ=25C 1.40 1.90 V
VCE(SAT) Collector-Emitter Saturation Voltage IC=7.5A, TJ=125C 1.60 - V
VF FWD Forward Voltage VIN=0, IF=7.5A, TJ=25C 1.55 2.00 V
tON Switching Times VPN=300V, VDD=VDB=15V, IC=10A, TJ=25C, VIN=0V 5V Inductive load 0.40 0.70 1.20 s
tC(ON) 0.15 0.40 s
tOFF 1.25 1.75 s
tC(OFF) 0.10 0.30 s
trr 0.10 - s
ICES Collector-Emitter Leakage Current VCE=VCES, TJ=25C - 1 mA
ICES Collector-Emitter Leakage Current VCE=VCES, TJ=125C - 10 mA
VF FWD Forward Voltage IF=20A, TJ=25C 1.45 - V
Trr Reverse recovery time TJ=25C, VR=400V, IF=20A, dIF/dt=300A/us 55 ns
Qrr Reverse recovery Charge 0.55 uC
Irr Peak reverse recovery current 16 A
Control (Protection)
IQDD Quiescent VDD Supply Current VDD=15V, IN(UH,VH,WH,UL,VL,WL) =0V - 2.1 mA
IQDB Quiescent VDB Supply Current VDB=15V, IN(UH, VH, WH)=0V - 0.3 mA
VSC(ref) Short-Circuit Trip Level VDD=15V (2) 0.455 0.48 0.505 V
UVDT Supply Circuit Under-Voltage Protection Trip Level 10.3 11.4 12.5 V
UVDR Reset Level 10.8 11.9 13.0 V
UVDBT Trip Level 8.5 9.5 10.5 V
UVDBR Reset Level 9.5 10.5 11.5 V
VOT Temperature Output LVIC Temperature=90C (3) 2.67 2.77 2.86 V
VOT Temperature Output LVIC Temperature=25C (3) 0.8 1.05 1.3 V
OTT Over-Temperature Protection The OT Pin is connected to VDD or open (4) 100 120 140 C
OTHYS Hysteresis of Trip Reset - 30 - C
VCFH Fault Output Voltage VSC=0V, VCF Circuit: 10k to 5V pull-up 4.9 - - V
VCFL Fault Output Voltage VSC=1V, VCF Circuit: 10k to 5V pull-up - - 0.5 V
VCF+ CF positive going threshold - 1.9 2.2 V
VCF- CF negative going threshold 0.8 1.1 - V
tFO Fault Output Pulse Width Pull-up resistor only (5) 20 - - s
tFO Fault Output Pulse Width Pull-up resistor with pull-down capacitor (RCF=2.2M, CCF=1nF, 5V pull-up) (Figure 5) (5) - 1 - ms
IIN Input Current VIN=5V 0.72 - mA
Vth(on) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)-COM 2.3 2.6 - V
Vth(off) OFF Threshold Voltage 0.8 1.2 - V
Vth(hys) ON/OFF Threshold Hysteresis Voltage - 1.1 - V
VF(BSD) Bootstrap Diode Forward Voltage IF=10mA Including Voltage Drop by Limiting Resistor (6) 0.5 1.0 1.5 V
RBSD Built-in Limiting Resistance Included in Bootstrap Diode 80 100 120
Recommended Operation Conditions
VPN Supply Voltage Applied between P-NU, NV, NW 0 300 400 V
VDD Control Supply Voltage Applied between VDD-COM 13.5 15.0 16.5 V
VDB High-Side Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 13.5 15.0 18.5 V
dVDD/dt, dVDB/dt Control Supply Variation -1 - +1 V/s
tded Arm Shoot-Through Blocking Time For each input signal 1.0 - - s
fPWM PWM Input Frequency -40C < TJ < 150C - - 20 kHz
PWIN(ON) Minimum Input Pulse Width (8) 0.5 - - s
PWIN(OFF) 0.5 - - s
COM Variation Between COM-NU, NV, NW (including surge) -5.0 - 5.0 V

Notes:

  • (1) For the measurement point of case temperature (TC), please refer to Figure 1.
  • (2) Short-circuit protection works only for low sides.
  • (3) When temperature exceeds the protective level that the user defined, the controller (MCU) should stop the IPM. Temperature of LVIC vs. VOT output characteristics is described in Figure 3.
  • (4) When the LVIC temperature exceeds OT Trip temperature level (OTT), OT protection is triggered and fault outputs. OT Trip level can be adjusted by pull-down resistors values as shown in the table below.
  • (5) Fault signal (FO) outputs when SC, UV or OT protection is triggered. FO pulse width is different for each protection mode. At SC failure, FO pulse width is fixed (minimum 20s) or controlled by RC network (see Figure 5), but at UV or OT failure, FO outputs continuously until recovering from UV or OT state.
  • (6) The characteristics of bootstrap diodes are shown in Figure 2.
  • (8) IPM may not respond if the input pulse width is less than PWIN(ON), PWIN(OFF).

2411071613_AOS-AIP3D15A060Q4T_C20266163.pdf

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