N Channel Silicon Carbide Power MOSFET ANHI ADQ120N040BH 1200 Volt 60 Milliohm RDS ON TO 247 Package
Key Attributes
Model Number:
ADQ120N040BH
Product Custom Attributes
Mfr. Part #:
ADQ120N040BH
Package:
TO-247-4L
Product Description
Silicon Carbide Power MOSFETs
Product Overview
ADQ120N040BH and ADW120N040BH are 1200V N-Channel Silicon Carbide Power MOSFETs designed for high-performance power electronics applications. These devices offer a low drain-source on-resistance (RDS(ON) of 40m typical) and are easy to control due to their enhancement mode operation with a gate switching feature. They are suitable for use in asymmetrical bridge converters, inverters, and single-switch forward and flyback topologies.
Product Attributes
- Material: Silicon Carbide
- Channel Type: N-Channel
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ADQ120N040BH | TO-247-4L | ADQ120N040BH | 1200 | 60 | 105 | 152 |
| ADW120N040BH | TO-247-3L | ADW120N040BH | 1200 | 60 | 105 | 152 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 50.5 | A | TC=25C, Limited by Tj,max |
| Continuous drain current | ID | 35 | A | TC=100C, Limited by Tj,max |
| Avalanche energy, single pulse | EAS | 990 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Gate source voltage (dynamic) | VGS | -10 to 22 | V | Absolute maximum values |
| Gate source voltage (static) | VGS | -5 to 20 | V | Absolute maximum values |
| Power dissipation | Ptot | 273 | W | TC=25C |
| Storage temperature | Tstg | -55 to 175 | C | |
| Operating junction temperature | Tj | -55 to 175 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | 19.5 | S | VDS=20V, IDS=33.3A, Tj=25C |
| Transconductance | GFS | 29.6 | S | VDS=20V, IDS=33.3A, Tj=175C |
| Maximum Duty Cycle | D | 0.50 | Pulse width tp limited by Tj,max |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | 0.55 to 0.7 | C/W | TO247 |
| Thermal resistance, junction - ambient | RthJA | 36 | C/W | device on PCB, minimal footprint |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 1200 | V | VGS=0V, ID=100uA |
| Gate threshold voltage | V(GS)th | 2 to 4 | V | VDS=VGS, ID=5mA |
| Zero gate voltage drain current | IDSS | 50 | uA | VDS=1200V, VGS=0 |
| Gate-source leakage current | IGSS+ | 250 | nA | VGS=22V, VDS=0 |
| Gate-source leakage current | IGSS- | -100 | nA | VGS=-10V, VDS=0 |
| Drain-source on-state resistance | RDS(on) | 40 to 60 | m | VGS=20V, ID=20A, Tj=25C |
| Drain-source on-state resistance | RDS(on) | 66 | m | VGS=20V, ID=20A, Tj=150C |
| Gate resistance (Intrinsic) | RG | 5.2 | f=1MHz, open drain |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Input capacitance | Ciss | 2530 | pF | VGS=0V, VDS=1000V, f=1MHz |
| Output capacitance | Coss | 110.7 | pF | VGS=0V, VDS=1000V, f=1MHz |
| Reverse transfer capacitance | Crss | 7.02 | pF | VGS=0V, VDS=1000V, f=1MHz |
| Turn-on delay time | td(on) | 57.71 | ns | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Rise time | tr | 15 | ns | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Turn-off delay time | td(off) | 36.56 | ns | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Fall time | tf | 9.924 | ns | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Turn-on Switching Energy | Eon | 1079 | uJ | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Turn-off Switching Energy | Eoff | 97.71 | uJ | VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Gate to source charge | Qgs | 33.8 | nC | VDD=800V, ID=30A, VGS=-4/18V |
| Gate to drain charge | Qgd | 34.1 | nC | VDD=800V, ID=30A, VGS=-4/18V |
| Gate charge total | Qg | 105 | nC | VDD=800V, ID=30A, VGS=-4/18V |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous Source Current | ISD | 50.5 | A | Limited by Tj,max |
| Diode forward voltage | VSD | 3.6 | V | IS = 20A, VGS = 0V, Tj=25C |
| Reverse recovery time | trr | 37.23 | ns | VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C |
| Reverse recovery charge | Qrr | 707.6 | nC | VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C |
| Peak reverse recovery current | Irrm | 30.55 | A | VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C |
2410121513_ANHI-ADQ120N040BH_C22470094.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
