Low EMI N Channel Power MOSFET Bestirpower BMD60N650UC1 with Ultra Fast Body Diode and Rugged Design
Key Attributes
Model Number:
BMD60N650UC1
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
8A
RDS(on):
650mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.16pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
406pF@50V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
15nC
Mfr. Part #:
BMD60N650UC1
Package:
TO-252
Product Description
Bestirpower BMx60N650UC1 N-Channel Power MOSFET
Product Overview
The Bestirpower BMx60N650UC1 is an N-Channel Power MOSFET utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling, offering designers the advantage of Low EMI and reduced switching losses. Its ultra-fast body diode and high commutation ruggedness make it suitable for demanding applications.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Product Line: BMx60N650UC1
Technical Specifications
| Model | Package | Top Marking | Packing Method |
|---|---|---|---|
| BMx60N650UC1 | TO-220 | BMF60N650UC1 | Tube |
| BMx60N650UC1 | TO-220F | BMB60N650UC1 | Tube |
| BMx60N650UC1 | TO-263 | BMD60N650UC1 | Tape & Reel |
| BMx60N650UC1 | TO-252 | BMD60N650UC1 | Tape & Reel |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| Drain to Source Voltage | VDSS | 600 | V | |||
| Gate to Source Voltage | VGSS | ±30 | V | |||
| Drain Current Continuous (TC= 25) | ID | 8 | A | |||
| Drain Current Continuous (TC= 125) | ID | 4 | A | |||
| Drain Current Pulsed | IDM | 24 | A | |||
| Power Dissipation For TO-220F | PD | 62.5 | W | |||
| Single Pulsed Avalanche Energy | EAS | 81 | mJ | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Maximum Operating Junction Temperature | TJ | 150 | ||||
| Maximum Lead Temperature for Soldering, 1/8 from Case | TL | 260 | ||||
| Continuous diode forward current TC=25C | IS | 8 | A | |||
| Diode pulse current | IS,pulse | 1) | 24 | A | ||
| Thermal Characteristics (FullPAK) TO220F | ||||||
| Thermal Resistance, Junction to Case, max | RJC | 2 | /W | |||
| Thermal Resistance, Junction to Ambient, max | RJA | 62 | /W | |||
| Thermal Characteristics (Non FullPAK) TO220, TO252, TO263 | ||||||
| Thermal Resistance, Junction to Case, max | RJC | 4.9 | /W | |||
| Thermal Resistance, Junction to Ambient, max | RJA | 49 | /W | |||
| Power Dissipation For TO-220, TO-252, TO-263 | PD | 25.5 | W | |||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Drain to Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250A | 600 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 600 V, VGS = 0 V TJ=25C | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 600 V, VGS = 0 V TJ=150C | - | - | 10 | µA |
| Gate-Source Leakage Current | IGSS | VGS = ±20 V, VDS = 0 V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 3.0 | - | - | V |
| Static Drain to Source On Resistance | RDS(on) | VGS = 10 V, ID = 3.5A,TJ=25C | - | 550 | 650 | mΩ |
| Input Capacitance | Ciss | VGS=0V, VDS=50V, f=1MHz | - | 406 | - | pF |
| Output Capacitance | Coss | - | 25 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 1.16 | - | pF | |
| Total Gate Charge | Qg | VGS = 0 to 10V, VDD =480V, ID =4A | - | 15 | - | nC |
| Gate to Source Charge | Qgs | - | 2.4 | - | nC | |
| Gate to Drain “Miller” Charge | Qgd | - | 9 | - | nC | |
| Gate plateau voltage | Vplateau | - | 6 | - | V | |
| Gate Resistance | RG | VDD = 0V, VGS= 0V,f = 1.0MHz | - | 3.6 | - | Ω |
| Turn-On Delay Time | td(on) | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 26 | - | ns |
| Turn-On Rise Time | tr | - | 28 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 40 | - | ns | |
| Turn-Off Fall Time | tf | - | 16 | - | ns | |
| Diode Forward Voltage | VSD | IF=4A, VGS = 0V TF=25C | - | 0.91 | - | V |
| Reverse Recovery Time | trr | VR = 400V, IF =5A diF/dt = 100A/µs | - | 80 | - | ns |
| Reverse Recovery Charge | Qrr | - | 0.39 | - | µC | |
| Peak Reverse Recovery Current | Irrm | - | 9.2 | - | A | |
| Effective output capacitance, energy related | Co(er) | 1) | - | 16 | - | pF |
| Effective output capacitance, time related | Co(tr) | 2) | - | 82 | - | pF |
| Diode Recovery dv/dt | dv/dt | 3) | - | 15 | - | V/ns |
| Maximum diode commutation speed | dif/dt | 3) | - | 500 | - | A/µs |
Applications
- PFC
- Adapter
- LCD TV
- LED lighting
- UPS
Features
- Ultra-fast body diode.
- Extremely low losses due to very low FOM RDS(on)*Qg and Eoss.
- Very high commutation ruggedness.
- Low EMI.
2504101957_Bestirpower-BMD60N650UC1_C46472752.pdf
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