power management solution featuring ARK micro DME6010D n channel depletion mode combo mosfet module
Key Attributes
Model Number:
DME6010D
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700Ω;30Ω
Gate Threshold Voltage (Vgs(th)):
27V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
12.3pF
Gate Charge(Qg):
1.55nC
Mfr. Part #:
DME6010D
Package:
SOP-7
Product Description
DME6010D N-Channel Depletion Mode Combo MOSFET Module
The DME6010D integrates a 600V depletion mode MOSFET for startup and a 100V depletion mode MOSFET with patented UltraVt for stable and safe voltage regulation. This non-isolated high voltage regulator is designed for PD and QC chargers, offering cost and space savings. Key features include proprietary advanced planar technology, rugged polysilicon gate cell structure, and advanced high Vth technology.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China (implied by address)
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | 600V MOSFET Parameters | 100V MOSFET Parameters | Package | Remark |
| DME6010D | Drain-to-Source Breakdown Voltage (BVDSSX): 600V Drain-to-Source Leakage Current (ID(OFF)): 0.1A (max) @ VDS=600V, VGS=-5V Gate-to-Source Leakage Current (IGSS): 20A (max) @ VGS=+20V, VDS=0V Saturated Drain-to-Source Current (IDSS): 5-25mA @ VGS=0V, VDS=25V Static Drain-to-Source On-Resistance (RDS(ON)): 500-700 @ VGS=0V, ID=3mA Gate-to-Source Cut-off Voltage (VGS(OFF)): -1.5 to -3.3V @ VDS=3V, ID=8A Forward Transconductance (gfs): 15.4mS (typ) @ VDS=10V, ID=5mA Input Capacitance (CISS): 12.3pF (typ) @ VGS=-5V, VDS=25V, f=1.0MHz Output Capacitance (COSS): 2.6pF (typ) Reverse Transfer Capacitance (CRSS): 1.8pF (typ) Total Gate Charge (QG): 1.55nC (typ) @ VGS=-5V~5V, VDS=300V, ID=7mA Turn-on Delay Time (td(on)): 4ns (typ) @ VGS = -5V~5V, VDD = 300V, ID=7mA, RG = 20 Rise Time (trise): 9ns (typ) Turn-off Delay Time (td(off)): 14ns (typ) Fall Time (tfall): 84ns (typ) Diode Forward Voltage (VSD): 1.2V (max) @ ISD =3.0mA, VGS = -10V | Drain-to-Source Breakdown Voltage (BVDSSX): 100V Drain-to-Source Leakage Current (ID(OFF)): 10A (max) @ VDS=100V, VGS=-30V Gate-to-Source Leakage Current (IGSS): 20A (max) @ VGS=+30V, VDS=0V Saturated Drain-to-Source Current (IDSS): 100mA (min) @ VGS=0V, VDS=25V Static Drain-to-Source On-Resistance (RDS(ON)): 30 (max) @ VGS=0V, ID=100mA Gate-to-Source Cut-off Voltage (VGS(OFF)): -27V (max) @ VDS=9V, ID=8A Source-to-Gate Clamp Voltage (VCL): 11.5V (min) @ VDS=9V, ID=5mA Diode Forward Voltage (VSD): 1.2V (max) @ ISD=100mA, VGS=-30V | SOP-7 | Halogen Free |
2504101957_ARK-micro-DME6010D_C46532089.pdf
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