150V N Channel MOSFET ARK micro FTS10N15G with enhanced ESD capability and RoHS compliant construction
Key Attributes
Model Number:
FTS10N15G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
350mA
RDS(on):
10Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.6pF
Number:
1 N-channel
Output Capacitance(Coss):
17.2pF
Input Capacitance(Ciss):
32.8pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
1.2nC@5V
Mfr. Part #:
FTS10N15G
Package:
SOT-223
Product Description
Product Overview
The FTS10N15G is a 150V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and optionally halogen-free component is suitable for applications such as relay drivers, high-speed line drivers, and logic level translators.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China (implied by company address)
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSX) | Continuous Drain Current (ID) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | RDS(ON) Typ. () | VGS(th) Typ. (V) | BVDSX Min. (V) |
| FTS10N15G | SOT-223 | 150 V | 0.35 A | 1.5 W | 20 V | 5 | 1.5 - 2.5 | 150 |
2410121606_ARK-micro-FTS10N15G_C3031428.pdf
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