Power MOSFET BL BLM10P03-D P Channel Type with Low Gate Charge and Performance in Switching Circuits
Product Overview
The Belling BLM10P03 is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This high-density cell design is optimized for lower Rdson and features excellent thermal dissipation packages. It is well-suited for a wide range of applications including power switching, hard switched and high-frequency circuits, and battery protection.
Product Attributes
- Brand: Belling
- Product Line: Green Product
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Drain Current-Continuous (PDFN3.3*3.3) | -24 | A | |||
| Drain Current-Continuous (PDFN5*6) | -30 | A | |||
| Drain Current-Continuous (SOP8) | -15 | A | |||
| Drain Current-Continuous (TO-252) | -40 | A | |||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-10V, ID=-17A | 8 | 10 | mΩ | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-4.5V, ID=-13A | 12 | 15 | mΩ | |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250μA | -30 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-30V,VGS=0V | -1 | μA | ||
| Gate-Body Leakage Current (IGSS) | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS,ID=-250μA | -1.0 | -1.5 | -2.4 | V |
| Forward Transconductance (gFS) | VDS=-5V,ID=-17A | 43 | S | ||
| Input Capacitance (Clss) | VDS=-15V,VGS=0V, f=1.0MHz | 2000 | pF | ||
| Output Capacitance (Coss) | 290 | pF | |||
| Reverse Transfer Capacitance (Crss) | 270 | pF | |||
| Turn-on Delay Time (td(on)) | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 10 | nS | ||
| Turn-on Rise Time (tr) | 8 | nS | |||
| Turn-Off Delay Time (td(off)) | 43 | nS | |||
| Turn-Off Fall Time (tf) | 18 | nS | |||
| Total Gate Charge (Qg) | VDS=-15V,ID=-17A VGS=-10V | 36 | nC | ||
| Gate-Source Charge (Qgs) | 5.3 | nC | |||
| Gate-Drain Charge (Qgd) | 8.8 | nC | |||
| Diode Forward Voltage (VSD) | VGS=0V,IS=-1 A | -1.2 | V | ||
| Operating Junction and Storage Temperature Range (TJ,TSTG) | -55 | 150 | °C |
Package Information
PDFN3.3*3.3
| Symbol | Min | Normal | Max |
|---|---|---|---|
| A | 0.70 | 0.80 | 0.90 |
| A1 | 0.00 | 0.03 | 0.05 |
| b | 0.24 | 0.30 | 0.35 |
| c | 0.152REF | ||
| D | 3.25 | 3.32 | 3.40 |
| D1 | 3.05 | 3.15 | 3.25 |
| D2 | 2.40 | 2.50 | 2.60 |
| E | 3.00 | 3.10 | 3.20 |
| E1 | 1.35 | 1.45 | 1.55 |
| e | 0.65BSC | ||
| H | 3.20 | 3.30 | 3.40 |
| L | 0.30 | 0.40 | 0.15 |
| L1 | 0.10 | 0.15 | 0.20 |
| L2 | 1.13REF | ||
| R | 0.20REF | ||
| θ | 6° | 10° | 14° |
PDFN 5*6
| Symbol | Min | Normal | Max |
|---|---|---|---|
| A | 0.8 | 0.9 | 1.0 |
| A1 | 0.00 | 0.03 | 0.05 |
| b | 0.35 | 0.42 | 0.49 |
| c | 0.254REF | ||
| D | 4.9 | 5.0 | 5.1 |
| F | 1.40REF | ||
| E | 5.7 | 5.8 | 5.9 |
| e | 1.27BSC | ||
| H | 5.95 | 6.08 | 6.20 |
| L1 | 0.10 | 0.14 | 0.18 |
| G | 0.60REF | ||
| K | 4.00REF | ||
| L | 0.15 | ||
| J | 0.95BSC | ||
| P | 1.00REF | ||
| E1 | 3.35 | 3.40 | 3.65 |
| θ | 6° | 10° | 14° |
| R | 0.25REF | ||
SOP8
| Symbol | Min | Max |
|---|---|---|
| A | 1.350 | 1.750 |
| A1 | 0.100 | 0.250 |
| A2 | 1.350 | 1.550 |
| b | 0.330 | 0.510 |
| c | 0.170 | 0.250 |
| D | 4.700 | 5.100 |
| E | 3.800 | 4.000 |
| E1 | 5.800 | 6.200 |
| e | 1.270BSC | |
| L | 0.400 | 1.270 |
| θ | 0° | 8° |
TO-252-2L
| Items | Values(mm) | MIN | MAX |
|---|---|---|---|
| A | 6.30 | 6.90 | |
| A1 | 0 | 0.13 | |
| B | 5.70 | 6.30 | |
| C | 2.10 | 2.50 | |
| D | 0.30 | 0.60 | |
| E1 | 0.60 | 0.90 | |
| E2 | 0.70 | 1.00 | |
| F | 0.30 | 0.60 | |
| G | 0.70 | 1.20 | |
| L1 | 9.60 | 10.50 | |
| L2 | 2.70 | 3.10 | |
| H | 0.60 | 1.00 | |
| M | 5.10 | 5.50 | |
| N | 2.09 | 2.49 | |
| R | 0 | ||
| T | 1.40 | 1.60 | |
| Y | 5.10 | 6.30 |
2201121300_BL-BLM10P03-D_C2924845.pdf
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