Power MOSFET BL BLM10P03-D P Channel Type with Low Gate Charge and Performance in Switching Circuits

Key Attributes
Model Number: BLM10P03-D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
23.2W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
BLM10P03-D
Package:
TO-252-2L
Product Description

Product Overview

The Belling BLM10P03 is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This high-density cell design is optimized for lower Rdson and features excellent thermal dissipation packages. It is well-suited for a wide range of applications including power switching, hard switched and high-frequency circuits, and battery protection.

Product Attributes

  • Brand: Belling
  • Product Line: Green Product

Technical Specifications

Parameter Condition Min Typ Max Unit
Drain-Source Voltage (VDS) -30 V
Gate-Source Voltage (VGS) ±20 V
Drain Current-Continuous (PDFN3.3*3.3) -24 A
Drain Current-Continuous (PDFN5*6) -30 A
Drain Current-Continuous (SOP8) -15 A
Drain Current-Continuous (TO-252) -40 A
Drain-Source On-State Resistance (RDS(ON)) VGS=-10V, ID=-17A 8 10
Drain-Source On-State Resistance (RDS(ON)) VGS=-4.5V, ID=-13A 12 15
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=-250μA -30 V
Zero Gate Voltage Drain Current (IDSS) VDS=-30V,VGS=0V -1 μA
Gate-Body Leakage Current (IGSS) VGS=±20V,VDS=0V ±100 nA
Gate Threshold Voltage (VGS(th)) VDS=VGS,ID=-250μA -1.0 -1.5 -2.4 V
Forward Transconductance (gFS) VDS=-5V,ID=-17A 43 S
Input Capacitance (Clss) VDS=-15V,VGS=0V, f=1.0MHz 2000 pF
Output Capacitance (Coss) 290 pF
Reverse Transfer Capacitance (Crss) 270 pF
Turn-on Delay Time (td(on)) VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω 10 nS
Turn-on Rise Time (tr) 8 nS
Turn-Off Delay Time (td(off)) 43 nS
Turn-Off Fall Time (tf) 18 nS
Total Gate Charge (Qg) VDS=-15V,ID=-17A VGS=-10V 36 nC
Gate-Source Charge (Qgs) 5.3 nC
Gate-Drain Charge (Qgd) 8.8 nC
Diode Forward Voltage (VSD) VGS=0V,IS=-1 A -1.2 V
Operating Junction and Storage Temperature Range (TJ,TSTG) -55 150 °C

Package Information

PDFN3.3*3.3

Symbol Min Normal Max
A 0.70 0.80 0.90
A1 0.00 0.03 0.05
b 0.24 0.30 0.35
c 0.152REF
D 3.25 3.32 3.40
D1 3.05 3.15 3.25
D2 2.40 2.50 2.60
E 3.00 3.10 3.20
E1 1.35 1.45 1.55
e 0.65BSC
H 3.20 3.30 3.40
L 0.30 0.40 0.15
L1 0.10 0.15 0.20
L2 1.13REF
R 0.20REF
θ 10° 14°

PDFN 5*6

Symbol Min Normal Max
A 0.8 0.9 1.0
A1 0.00 0.03 0.05
b 0.35 0.42 0.49
c 0.254REF
D 4.9 5.0 5.1
F 1.40REF
E 5.7 5.8 5.9
e 1.27BSC
H 5.95 6.08 6.20
L1 0.10 0.14 0.18
G 0.60REF
K 4.00REF
L 0.15
J 0.95BSC
P 1.00REF
E1 3.35 3.40 3.65
θ 10° 14°
R 0.25REF

SOP8

Symbol Min Max
A 1.350 1.750
A1 0.100 0.250
A2 1.350 1.550
b 0.330 0.510
c 0.170 0.250
D 4.700 5.100
E 3.800 4.000
E1 5.800 6.200
e 1.270BSC
L 0.400 1.270
θ

TO-252-2L

Items Values(mm) MIN MAX
A 6.30 6.90
A1 0 0.13
B 5.70 6.30
C 2.10 2.50
D 0.30 0.60
E1 0.60 0.90
E2 0.70 1.00
F 0.30 0.60
G 0.70 1.20
L1 9.60 10.50
L2 2.70 3.10
H 0.60 1.00
M 5.10 5.50
N 2.09 2.49
R 0
T 1.40 1.60
Y 5.10 6.30

2201121300_BL-BLM10P03-D_C2924845.pdf

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