N Channel Enhancement Mode MOSFET BL BLM2302 with Low Gate Voltage and High Power Handling in SOT 23
Key Attributes
Model Number:
BLM2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BLM2302
Package:
SOT-23
Product Description
Product Overview
The Belling BLM2302 is an N-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high power and current handling capability. It is a lead-free product and comes in a surface mount SOT-23 package.
Product Attributes
- Brand: Belling
- Product Line: BLM Series
- Mode: N-Channel Enhancement Mode
- Technology: Advanced Trench Technology
- Certifications: Pb Free
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Continuous Drain Current | ID | 2.9 | A | |||
| RDS(ON) | RDS(ON) | VGS=2.5V | 59 | m | ||
| RDS(ON) | RDS(ON) | VGS=4.5V | 45 | m | ||
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 2.9 | A | |||
| Pulsed Drain Current (Note 1) | IDM | 10 | A | |||
| Maximum Power Dissipation | PD | 1 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 125 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | 22 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | - | 100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=2.5A | - | 37 | 59 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=2.9A | - | 30 | 45 | m |
| Forward Transconductance | gFS | VDS=5V,ID=2.9A | - | 8 | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | - | 300 | - | PF | |
| Output Capacitance | Coss | - | 120 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, F=1.0MHz | - | 80 | - | PF |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=10V,ID=2.9A, VGS=4.5V,RGEN=6 | - | 10 | 15 | nS |
| Turn-on Rise Time | tr | VDD=10V,ID=2.9A, VGS=4.5V,RGEN=6 | - | 50 | 85 | nS |
| Turn-Off Delay Time | td(off) | VDD=10V,ID=2.9A, VGS=4.5V,RGEN=6 | - | 17 | 45 | nS |
| Turn-Off Fall Time | tf | VDD=10V,ID=2.9A, VGS=4.5V,RGEN=6 | - | 10 | 20 | nS |
| Total Gate Charge | Qg | - | 4.0 | 10 | nC | |
| Gate-Source Charge | Qgs | - | 0.65 | - | nC | |
| Gate-Drain Charge | Qgd | VDS=10V,ID=2.9A, VGS=4.5V | - | 1.2 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=2.9A | - | 0.75 | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 2.9 | A | |
| Package Information | ||||||
| Package Type | SOT-23 | |||||
| Device Marking | 2302 | |||||
| Ordering Device | BLM2302 | |||||
| Reel Size | 180mm | |||||
| Tape Width | 8 mm | |||||
| Quantity | 3000 units | |||||
| SOT-23 Package Dimensions (UNIT:mm) | ||||||
| Symbol | MIN. | MAX. | Symbol | MIN. | MAX. | |
| A | 0.900 | 1.150 | e | 0.950TYP | ||
| A1 | 0.000 | 0.100 | e1 | 1.800 | 2.000 | |
| A2 | 0.900 | 1.050 | L | 0.550REF | ||
| b | 0.300 | 0.500 | L1 | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | 0 | 8 | ||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
1809291529_BL-BLM2302_C110999.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
