P Channel MOSFET ASDsemi ASDM30P100KQ-R Suitable for Battery Protection and Wireless Impact Circuits
Key Attributes
Model Number:
ASDM30P100KQ-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
700pF
Number:
1 P-Channel
Output Capacitance(Coss):
742pF
Pd - Power Dissipation:
109W
Input Capacitance(Ciss):
6.56nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
ASDM30P100KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM30P100KQ is a -30V P-Channel MOSFET designed with advanced groove technology, offering excellent RDS(ON) and operating at low gate voltage. This MOSFET is suitable for applications such as lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: P-Channel MOSFET
- Technology: Advanced groove technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDSS | Drain-Source Voltage | -30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TC = 25 | -100 | A | ||
| ID | Continuous Drain Current | TC = 100 | -59 | A | ||
| IDM | Pulsed Drain Current | note1 | -400 | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 210 | mJ | ||
| PD | Power Dissipation | TC = 25 | 109 | W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS= -30V, VGS=0V | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±20V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250A | -1.0 | -1.5 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -10V, ID= -30A | - | 5.0 | 6.0 | mΩ |
| VGS= -4.5V, ID= -20A | - | 7.0 | 9.0 | mΩ | ||
| Capacitance | Input Capacitance (Ciss) | VDS= -15V, VGS=0V, f=1.0MHz | - | 30 | - | nF |
| Output Capacitance (Coss) | - | 6560 | - | pF | ||
| Reverse Transfer Capacitance (Crss) | - | 742 | - | pF | ||
| Gate Charge | Total Gate Charge (Qg) | VDS= -15V, ID= -30A, VGS= -10V | - | 6 | - | nC |
| Gate-Source Charge (Qgs) | - | - | - | nC | ||
| Gate-Drain(Miller) Charge (Qgd) | - | 8 | - | nC | ||
| Switching Times | Turn-on Delay Time (td(on)) | VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω | - | 11 | - | ns |
| Turn-on Rise Time (tr) | - | 13 | - | ns | ||
| Turn-off Delay Time (td(off)) | - | 52 | - | ns | ||
| Turn-off Fall Time (tf) | - | 21 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -100 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -400 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -30 A | - | -0.8 | -1.2 | V |
| Ordering and Marking Information | ||||||
| Device No. | Marking | Package | Packing | Quantity | ||
| ASDM30P100KQ-R | 30P100 | TO-252 | Tape&Reel | 2500/Reel | ||
Notes:
- 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
- 2. EAS condition: TJ =25, VDD = -15V, VG = -10V, RG =25, L=0.5mH, IAS = -29A
- 3. Pulse Test: Pulse Width≤300s, Duty Cycle≤2%
2410121513_ASDsemi-ASDM30P100KQ-R_C2972873.pdf
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