BL BL4N90 P N channel Enhanced MOSFET designed for high frequency switching and power management

Name: BL BL4N90 P N channel Enhanced MOSFET designed for high frequency switching and power management
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BL4N90-P
Availability: InStock

Key Attributes

Model Number: BL4N90-P

Product Custom Attributes

Drain To Source Voltage:

900V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

3Ω@10V

Gate Threshold Voltage (Vgs(th)):

4.5V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

3pF

Number:

1 N-channel

Output Capacitance(Coss):

70pF

Input Capacitance(Ciss):

900pF

Pd - Power Dissipation:

140W

Gate Charge(Qg):

17nC@10V

Mfr. Part #:

BL4N90-P

Package:

TO-220

Product Description

Product Overview

The BL4N90 is a silicon N-channel Enhanced Power MOSFET designed for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. Key features include fast switching, 100% avalanche testing, and improved dv/dt capability, making it a reliable component for demanding electronic designs.

Product Attributes

Brand: Belling
Product Type: Power MOSFET
Channel Type: N-channel
Technology: Enhanced MOSFET
Certifications: RoHS product

Technical Specifications

Parameter	Value	Unit	Notes
Drain-to-Source Voltage (VDS@Tj.max)	900	V
Continuous Drain Current (ID)	4	A
On-Resistance (RDS(ON).Typ)	2.6
Continuous Drain Current (ID at TC = 100 C)	2.53	A
Pulsed Drain Current (IDM)	16	A	Note 1
Gate-to-Source Voltage (VGS)	30	V
Single Pulse Avalanche Energy (EAS)	580	mJ	Note 2
Peak Diode Recovery dv/dt	4.5	V/ns	Note 3
Operating Junction and Storage Temperature Range (TJ, Tstg)	-55 to 150
Maximum Temperature for Soldering (TL)	300
Drain-to-Source Breakdown Voltage (VDS)	900	V	VGS=0V, ID=250A
Drain to Source Leakage Current (IDSS at Tj = 25)	10	A	VDS =900V, VGS= 0V
Drain to Source Leakage Current (IDSS at Tj = 125)	100	A	VDS =720V, VGS= 0V
Gate to Source Forward Leakage (IGSS(F))	100	nA	VGS =+30V
Gate to Source Reverse Leakage (IGSS(R))	-100	nA	VGS =-30V
On-Resistance (RDS(ON) at VGS=10V, ID=2A)	2.6 - 3.0		Note 4
Gate Threshold Voltage (VGS(TH))	3.0 - 4.5	V	VDS = VGS, ID = 250A (Note 4)
Gate resistance (Rg)	2.5		f = 1.0MHz
Input Capacitance (Ciss)	900	PF	VGS = 0V, VDS = 25V, f = 1.0MHz
Output Capacitance (Coss)	70	PF
Reverse Transfer Capacitance (Crss)	3	PF
Turn-on Delay Time (td(ON))	25	ns	ID =4A, VDD = 450V, VGS = 10V, RG =20
Rise Time (tr)	30	ns
Turn-Off Delay Time (td(OFF))	45	ns
Fall Time (tf)	25	ns
Total Gate Charge (Qg)	17	nC	ID =4A, VDD =720V, VGS = 10V
Gate to Source Charge (Qgs)	5	nC
Gate to Drain (Miller)Charge (Qgd)	7	nC
Continuous Source Current (IS) (Body Diode)	4	A	TC=25 C
Maximum Pulsed Current (ISM) (Body Diode)	16	A
Diode Forward Voltage (VSD)	1.2	V	IS=4A, VGS=0V (Note 4)
Reverse Recovery Time (Trr)	450	ns	IS=4A, Tj = 25C, dIF/dt=100A/us, VGS=0V
Reverse Recovery Charge (Qrr)	2880	nC
Reverse Recovery Current (Irrm)	12.8	A

Ordering Information

Ordering Code	Package	Packing
BL4N90-P	TO-220	Tube
BL4N90-A	TO-220F	Tube
BL4N90-U	TO-251	Tube
BL4N90-D	TO-252	Tape Reel

Package Dimensions

TO-220F Package:

Item	MIN (mm)	MAX (mm)
A	9.60	10.4
B	15.4	16.2
B1	8.90	9.50
C	4.30	4.90
C1	2.10	3.00
D	2.40	3.00
E	0.60	1.00
F	0.30	0.60
G	1.12	1.42
H	3.40	3.80
I	1.60	2.90
L	12.0	14.0
N	2.34	2.74
Q	3.15	3.55
R	2.90	3.30

TO-220 Package:

Item	MIN (mm)	MAX (mm)
A	9.60	10.6
B	15.0	16.0
B1	8.90	9.50
C	4.30	4.80
C1	2.30	3.10
D	1.20	1.40
E	0.70	0.90
F	0.30	0.60
G	1.17	1.37
H	2.70	3.80
L	12.6	14.8
N	2.34	2.74
Q	2.40	3.00
R	3.50	3.90

TO-251 Package:

Item	MIN (mm)	MAX (mm)
A	6.30	6.90
B	5.70	6.30
B1	1.00	1.20
B2	6.80	7.40
C	2.10	2.50
D	0.30	0.60
E	0.50	0.70
F	0.30	0.60
G	0.70	1.00
H	1.60	2.40
L*	3.9	4.3
M	5.10	5.50
N	2.09	2.49

TO-252 Package:

Item	MIN (mm)	MAX (mm)
A	6.30	6.90
A1	0	0.13
B	5.70	6.30
C	2.10	2.50
D	0.30	0.60
E1	0.60	0.90
E2	0.70	1.00
F	0.30	0.60
G	0.70	1.20
L1	9.60	10.50
L2	2.70	3.10
H	0.60	1.00
M	5.10	5.50
N	2.09	2.49
R	0.3
T	1.40	1.60
Y	5.10	6.30

Important Notes

Exceeding the maximum ratings of the device may cause damage or permanent failure. Always design within the absolute maximum ratings.
When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
MOSFETs are sensitive to static electricity; protect them from damage during use.
Shanghai Belling reserves the right to make changes to this specification sheet without prior notice.

Contact Information

Shanghai Belling Co., Ltd. (Headquarters)
Address: No. 810 Yishan Road, Shanghai, China
Postal Code: 200233
Tel: 021-24261000
Product Business Inquiry & Technical Support:
Tel: 021-24261326
Fax 2: 021-64852222
Email 2: marketing@belling.com.cn

Shanghai Belling Shenzhen Branch (South China)
Address: Room 1510, Xinhua Insurance Building, Min Tian Road, Futian Central District, Shenzhen, China
Postal Code: 518031
Tel: 0755-33336776, 0755-33336770
Fax: 0755-33336788

Shanghai Belling Beijing Office (North China)
Address: Unit 1, Building 10, Jingguan Yuan Residential Area, No. 16 Xinhua Li, Xicheng District, Beijing, China
Postal Code: 100044
Tel: 010-64179374
Fax: 010-8835 9236

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