Low gate charge 60V N Channel MOSFET ASDsemi ASDM60N70Q R designed for power management in converters
Key Attributes
Model Number:
ASDM60N70Q-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
56.5W
Input Capacitance(Ciss):
2.455nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ASDM60N70Q-R
Package:
DFN-8(5x6)
Product Description
Product Overview
The Ascend Semiconductor ASDM60N70Q is a 60V N-Channel MOSFET designed with Trench Power DTMOS Technology. It offers low RDS(ON) and low gate charge, making it optimized for fast-switching applications. This MOSFET is ideal for synchronous rectification in DC/DC and AC/DC converters, as well as isolated DC/DC converters in telecom and industrial sectors.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend Semicondutor
- Technology: Trench Power DTMOS
- Channel Type: N-Channel
- Package Type: DFN5*6-8
- Origin: China (implied by company name and location)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | VGS = 0V | 60 | V |
| RDS(ON)-Typ@VGS=10V | RDS(on) | VGS = 10V, ID = 20A | 6.5 | m |
| Continuous Drain Current | ID | TC = 25C | 64 | A |
| Pulsed Drain Current | IDM | (note1) | 256 | A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy | EAS | (note2) | 65 | mJ |
| Avalanche Current | IAS | (note1) | 36 | A |
| Power Dissipation | PD | TC = 25C | 56.5 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | 1.7 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | C/W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V, TJ = 25C | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V, TJ = 150C | 100 | A |
| Gate-Source Leakage | IGSS | VGS = 20V | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 - 4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A (Note3) | 6.5 - 9 | m |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A (Note3) | 85 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 30V, f = 1.0MHz | 2455 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 30V, f = 1.0MHz | 240 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 30V, f = 1.0MHz | 34 | pF |
| Total Gate Charge | Qg | VDD = 30V, ID = 20A, VGS = 10V | 45 | nC |
| Gate-Source Charge | Qgs | VDD = 30V, ID = 20A, VGS = 10V | 13.5 | nC |
| Gate-Drain Charge | Qg | VDD = 30V, ID = 20A, VGS = 10V | 11.5 | nC |
| Turn-on Delay Time | td(on) | VDD = 30V, ID = 20A, RG = 3 | 8 | ns |
| Turn-on Rise Time | tr | VDD = 30V, ID = 20A, RG = 3 | 3 | ns |
| Turn-off Delay Time | td(off) | VDD = 30V, ID = 20A, RG = 3 | 25 | ns |
| Turn-off Fall Time | tf | VDD = 30V, ID = 20A, RG = 3 | 4 | ns |
| Continuous Body Diode Current | IS | TC = 25C | 64 | A |
| Pulsed Diode Forward Current | ISM | 256 | A | |
| Body Diode Voltage | VSD | TJ = 25C, ISD = 1A, VGS = 0V | 0.72 - 1 | V |
| Reverse Recovery Time | trr | IF = 20A, diF/dt = 500A/s | 25 | ns |
| Reverse Recovery Charge | Qrr | IF = 20A, diF/dt = 500A/s | 110 | nC |
Ordering and Marking Information
| Package | Marking | Device No. | Packing Quantity |
|---|---|---|---|
| DFN5*6-8 | 60N70 | ASDM60N70Q-R | 4000/Reel |
2410121637_ASDsemi-ASDM60N70Q-R_C2972885.pdf
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