350V N Channel MOSFET ARK micro FTZ15N35G optimized for active PFC and adaptor charger applications

Key Attributes
Model Number: FTZ15N35G
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
200mA
RDS(on):
15Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.75pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
32.58pF
Pd - Power Dissipation:
500mW
Mfr. Part #:
FTZ15N35G
Package:
SOT-23
Product Description

Product Overview

The FTZ15N35G is a 350V N-Channel MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and halogen-free available MOSFET is designed for high efficiency SMPS, adaptors/chargers, and active PFC applications.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Origin: P. R. China
  • Certifications: RoHS Compliant, Halogen-free available

Technical Specifications

Part NumberPackageDrain-to-Source Voltage (VDSX)Continuous Drain Current (ID)Power Dissipation (PD)Gate-to-Source Voltage (VGS)Gate Source ESD (VESD(G-S))Operating and Storage Temperature Range (TJ and TSTG)Thermal Resistance (RJA)Drain-to-Source Breakdown Voltage (BVDSX)Static Drain-to-Source On-Resistance (RDS(ON) Max.)Gate Threshold Voltage (VGS(TH))Input Capacitance (CISS)Oput Capacitance (COSS)Reverse Transfer Capacitance (CRSS)Turn-on Delay Time (td(ON))Rise Time (trise)Turn-off Delay Time (td(OFF))Fall Time (tfall)Diode Forward Voltage (VSD)
FTZ15N35GSOT-23350 V0.2 A0.50 W20 V200 V-55 to 150 250 K/W350 V15 1 V32.58 pF5.36 pF0.75 pF14 ns10 ns24 ns36 ns1.8 V

2410121606_ARK-micro-FTZ15N35G_C3031430.pdf

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