350V N Channel MOSFET ARK micro FTZ15N35G optimized for active PFC and adaptor charger applications
Product Overview
The FTZ15N35G is a 350V N-Channel MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and halogen-free available MOSFET is designed for high efficiency SMPS, adaptors/chargers, and active PFC applications.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: P. R. China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSX) | Continuous Drain Current (ID) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | Gate Source ESD (VESD(G-S)) | Operating and Storage Temperature Range (TJ and TSTG) | Thermal Resistance (RJA) | Drain-to-Source Breakdown Voltage (BVDSX) | Static Drain-to-Source On-Resistance (RDS(ON) Max.) | Gate Threshold Voltage (VGS(TH)) | Input Capacitance (CISS) | Oput Capacitance (COSS) | Reverse Transfer Capacitance (CRSS) | Turn-on Delay Time (td(ON)) | Rise Time (trise) | Turn-off Delay Time (td(OFF)) | Fall Time (tfall) | Diode Forward Voltage (VSD) |
| FTZ15N35G | SOT-23 | 350 V | 0.2 A | 0.50 W | 20 V | 200 V | -55 to 150 | 250 K/W | 350 V | 15 | 1 V | 32.58 pF | 5.36 pF | 0.75 pF | 14 ns | 10 ns | 24 ns | 36 ns | 1.8 V |
2410121606_ARK-micro-FTZ15N35G_C3031430.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.