motor drive intelligent power module AOS AIP5D10K060Q1 with integrated Schmitt trigger receiver circuits

Key Attributes
Model Number: AIP5D10K060Q1
Product Custom Attributes
Mfr. Part #:
AIP5D10K060Q1
Product Description

AIP5D10K060Q1 / AIP5D10K060Q1S Intelligent Power Module

Product Overview
The AIP5D10K060Q1 and AIP5D10K060Q1S are intelligent power modules (IPM) designed for 3-phase inverter applications. These modules integrate Trench Shielded Planar Gate IGBTs with HVIC drivers, bootstrap diodes featuring integrated current-limiting resistors, and comprehensive protection features including control supply under-voltage lockout (UVLO), over-temperature (OT) protection, and short-circuit current protection (CSC). They offer a wide input interface with Schmitt trigger receiver circuits and isolation ratings of 2000Vrms. Ideal for low-power motor drives in applications such as refrigerators, dishwashers, fan motors, washing machines, and air conditioners, these modules provide robust and reliable performance.

Product Attributes

  • Brand: AOS (Alpha and Omega Semiconductor)
  • Certifications: UL Recognized (UL1557 File E345245)
  • Compliance: AOS Green Products (Reduced Halogens, RoHS compliant)
  • Package Types: Dual-In-Line Package

Technical Specifications

Parameter Conditions Min. Typ. Max. Units
General
External View Size 33.4 x 15 x 3.6 mm
Part Number Temperature Range Package Pin Length Description
AIP5D10K060Q1 -40C to 150C IPM-5 Normal
AIP5D10K060Q1S -40C to 150C IPM-5A Short
Inverter Ratings
Supply Voltage (VPN) Applied between P - NU,NV,NW 0 300 400 V
Supply Voltage (VPN) Applied between P - NU,NV,NW 450 V
Supply Voltage (VPN-surge) Applied between P - NU,NV,NW 500 V
Collector-Emitter Voltage (VCES) 600 V
Output Phase Current (IC) TC=25C, TJ<150C 10 A
Output Phase Current (IC) TC=100C, TJ<150C 5 A
Output Peak Phase Current (IPK) TC=25C, less than 1ms pulse width 20 A
Short Circuit Withstand Time (tSC) VPN400V, TJ=150C, VD=15V 5 s
Collector Dissipation (PC) TC=25C, per chip 23 W
Operating Junction Temperature (TJ) -40 150 C
Control (Protection) Ratings
Control Supply Voltage (VDD) Applied between VDD-COM 25 V
High-Side Control Bias Voltage (VDB) Applied between VB(U)-U, VB(V)-V, VB(W)-W 25 V
Input Voltage (VIN) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) COM VDD-0.5 VDD+0.5 V
Fault Output Supply Voltage (VFO) Applied between VFO-COM 5 5.5 V
Fault Output Current (IFO) Sink current at VFO terminal 1 mA
Current Sensing Input Voltage (VSC) Applied between CSC-COM 5 5.5 V
Temperature Output (VOT) Applied between VOT-COM 5 5.5 V
Total System Ratings
Self Protection Supply Voltage Limit (VPN(PROT)) VDD=13.5-16.5V, Inverter part TJ=150C, Non-repetitive, less than 2s 400 V
Module Case Operation Temperature (TC) Measurement point of TC is provided in Figure 1 -30 125 C
Storage Temperature (TSTG) -40 150 C
Isolation Voltage (VISO) 60Hz, sinusoidal, AC 1min, between connected all pins and heat sink plate 2000 Vrms
Thermal Resistance
Junction to Case (Rth(j-c)Q) Inverter IGBT (per 1/6 module) - - 5.4 K/W
Junction to Case (Rth(j-c)F) Inverter FWD (per 1/6 module) - - 6.9 K/W
Electrical Characteristics
Collector-Emitter Saturation Voltage (VCE(SAT)) VDD=VDB=15V, VIN=5V, IC=5A, TJ=25C - 1.60 2.00 V
Collector-Emitter Saturation Voltage (VCE(SAT)) VDD=VDB=15V, VIN=5V, IC=5A, TJ=125C - 1.90 - V
FWD Forward Voltage (VF) VIN=0, IF=5A, TJ=25C - 1.36 1.80 V
Switching Times (tON) VPN=300V, VDD=VDB=15V, IC=5A, TJ=25C, VIN=0V 5V Inductive load (high-side) 0.30 0.60 1.10 s
Switching Times (tC(ON)) 0.10 0.20 s
Switching Times (tOFF) 1.00 1.50 s
Switching Times (tC(OFF)) 0.20 0.40 s
Switching Times (trr) 0.30 - - s
Collector-Emitter Leakage Current (ICES) VCE=VCES, TJ=25C - - 1 mA
Collector-Emitter Leakage Current (ICES) VCE=VCES, TJ=125C - - 10 mA
Quiescent VDD Supply Current (IQDD) VDD=15V, IN(UH,VH,WH,UL,VL,WL) =0V - - 2.1 mA
Quiescent VDB Supply Current (IQDB) VDB=15V, IN(UH, VH, WH)=0V - - 0.3 mA
Short-Circuit Trip Level (VSC(ref)) VDD=15V 0.45 0.48 0.51 V
Under-Voltage Protection Trip Level (UVDT) 10.3 11.4 12.5 V
Under-Voltage Reset Level (UVDR) 10.8 11.9 13.0 V
Under-Voltage Protection Trip Level (UVDBT) 8.5 9.5 10.5 V
Under-Voltage Reset Level (UVDBR) 9.5 10.5 11.5 V
Temperature Output (VOT) LVIC Temperature=80C, R=10k 2.36 2.45 2.55 V
Temperature Output (VOT) LVIC Temperature=25C, R=10k 0.77 1.00 1.25 V
Over-Temperature Protection (OTT) Detect LVIC Temperature Trip Level 110 130 150 C
Hysteresis of Trip Reset (OTHYS) - 30 - C
Fault Output Voltage (VFOH) VSC=0V, VFO Circuit: 10k to 5V pull-up 4.9 - - V
Fault Output Voltage (VFOL) VSC=1V, VFO Circuit: 10k to 5V pull-up - - 0.5 V
Fault Output Pulse Width (tFO) 20 - - s
Input Current (IIN) VIN=5V - 1.0 - mA
ON Threshold Voltage (Vth(on)) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)-COM 2.3 2.6 - V
OFF Threshold Voltage (Vth(off)) 0.8 1.2 - V
ON/OFF Threshold Hysteresis Voltage (Vth(hys)) - 1.1 - V
Bootstrap Diode Forward Voltage (VF(BSD)) IF=10mA Including Voltage Drop by Limiting Resistor 1.0 1.5 2.0 V
Built-in Limiting Resistance (RBSD) Included in Bootstrap Diode 80 100 120
Recommended Operation Conditions
Supply Voltage (VPN) Applied between P-NU, NV, NW 0 300 400 V
Control Supply Voltage (VDD) Applied between VDD-COM 13.5 15.0 16.5 V
High-Side Bias Voltage (VDB) Applied between VB(U)-U, VB(V)-V, VB(W)-W 13.5 15.0 18.5 V
Control Supply Variation (dVDD/dt, dVDB/dt) -1 - 1 V/s
Arm Shoot-Through Blocking Time (tdead) For each input signal 1.0 - - s
PWM Input Frequency (fPWM) -40C < TJ < 150C - - 20 kHz
Minimum Input Pulse Width (PWIN(ON)) 0.5 - - s
Minimum Input Pulse Width (PWIN(OFF)) 0.5 - - s
COM Variation Between COM-NU, NV, NW (including surge) -5.0 - 5.0 V

2411071614_AOS-AIP5D10K060Q1_C20266173.pdf
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