Dual N Channel MOSFET 30V ASDsemi ASDM3010S R for Power Electronics and Inverter System Integration
Product Overview
The Ascend Semiconductor ASDM3010S is a 30V Dual N-Channel MOSFET designed for power management applications, particularly in inverter systems and for synchronous rectification. It features dual N-Channel, 5V logic level control, enhancement mode operation, and fast switching capabilities, making it an efficient component for demanding power electronic circuits.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend
- Model Series: ASDM3010S
- Package Type: SOP-8
- MSL Level: Level 3
Technical Specifications
| Parameter | Rating | Unit | Notes |
|---|---|---|---|
| Drain-Source breakdown voltage (V(BR)DSS) | 30 | V | |
| Diode continuous forward current (IS) | 2.3 | A | TA = 25C |
| Continuous drain current (ID) @VGS=10V | 9 | A | TA = 25C |
| Continuous drain current (ID) | 5.0 | A | TA = 70C |
| Pulse drain current (IDM) | 30 | A | TA = 25C, Pulse Test: Pulse Width 300s, Duty Cycle 2% |
| Avalanche energy, single pulsed (EAS) | 9 | mJ | |
| Maximum power dissipation (PD) | 2.5 | W | TA = 25C |
| Gate-Source voltage (VGS) | 20 | V | |
| Storage temperature range (TSTG) | -55 to 150 | C | |
| Thermal Resistance-Junction to Lead (RJL) | 40 | C/W | Typical |
| Thermal Resistance-Junction to Ambient (RJA) | 50 | C/W | Typical |
| On-Resistance, Drain-Source (RDS(on), TYP) @ VGS=10V | 15.5 | m | ID = 9 A |
Ordering Information
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM3010S-R | 3010 | SOP-8 | Tape&Reel | 4000 |
2409291808_ASDsemi-ASDM3010S-R_C2758224.pdf
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