Dual N Channel MOSFET 30V ASDsemi ASDM3010S R for Power Electronics and Inverter System Integration

Key Attributes
Model Number: ASDM3010S-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
2 N-Channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
685pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
4.1nC
Mfr. Part #:
ASDM3010S-R
Package:
SOP-8
Product Description

Product Overview

The Ascend Semiconductor ASDM3010S is a 30V Dual N-Channel MOSFET designed for power management applications, particularly in inverter systems and for synchronous rectification. It features dual N-Channel, 5V logic level control, enhancement mode operation, and fast switching capabilities, making it an efficient component for demanding power electronic circuits.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Line: Ascend
  • Model Series: ASDM3010S
  • Package Type: SOP-8
  • MSL Level: Level 3

Technical Specifications

Parameter Rating Unit Notes
Drain-Source breakdown voltage (V(BR)DSS) 30 V
Diode continuous forward current (IS) 2.3 A TA = 25C
Continuous drain current (ID) @VGS=10V 9 A TA = 25C
Continuous drain current (ID) 5.0 A TA = 70C
Pulse drain current (IDM) 30 A TA = 25C, Pulse Test: Pulse Width 300s, Duty Cycle 2%
Avalanche energy, single pulsed (EAS) 9 mJ
Maximum power dissipation (PD) 2.5 W TA = 25C
Gate-Source voltage (VGS) 20 V
Storage temperature range (TSTG) -55 to 150 C
Thermal Resistance-Junction to Lead (RJL) 40 C/W Typical
Thermal Resistance-Junction to Ambient (RJA) 50 C/W Typical
On-Resistance, Drain-Source (RDS(on), TYP) @ VGS=10V 15.5 m ID = 9 A

Ordering Information

Device No. Marking Package Packing Quantity
ASDM3010S-R 3010 SOP-8 Tape&Reel 4000

2409291808_ASDsemi-ASDM3010S-R_C2758224.pdf

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