Compact ARK micro AKF30N10S 30V N channel MOSFET delivering power dissipation at 30 watts rating
Key Attributes
Model Number:
AKF30N10S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
RDS(on):
12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.374nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
9.6nC@0V
Mfr. Part #:
AKF30N10S
Package:
PDFN3333-8
Product Description
Product Overview
The AKF30N10S is a 30V N-Channel Enhancement Mode MOSFET from ARK Microelectronics. It features low RDS(ON), low gate charge, and advanced high cell density trench technology. This RoHS compliant and halogen-free available device is 100% avalanche tested and is suitable for power management in inverter systems, synchronous rectification, and load switch applications.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Rating | Unit | Test Conditions |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 30 | V | TA=25C unless otherwise specified |
| GateSource Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID) @ TC=25C | 45 | A | |
| Continuous Drain Current (ID) @ TC=100C | 28 | A | |
| 300us Pulsed Drain Current (IDP) | 180 | A | Tested |
| Single Pulse Avalanche Energy (EAS) | 25 | mJ | L=0.5mH, IAS=10A, Starting TJ=25C |
| Power Dissipation (PD) | 30 | W | |
| Derating Factor above 25C | 0.24 | W/C | |
| Operating and Storage Temperature Range (TJ and TSTG) | -55 ~ 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | 34 | C /W | |
| Thermal Resistance, Junction-to-Case (RJC) | 4.2 | C /W | |
| OFF Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | 30 | V | VGS=0V, ID=250A |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS=24V, VGS=0V |
| Gate Leakage Current (IGSS) @ VGS=20V | 100 | nA | VDS=0V |
| Gate Leakage Current (IGSS) @ VGS=-20V | -100 | nA | VDS=0V |
| On Characteristics | |||
| Drain-Source On-Resistance (RDS(ON)) @ VGS=10V, ID=15A | 7.3 | m | Min. Typ. Max. |
| Drain-Source On-Resistance (RDS(ON)) @ VGS=4.5V, ID=10A | 9.0 | m | Min. Typ. Max. |
| Gate Threshold Voltage (VGS(TH)) | 1.0 ~ 2.0 | V | VDS = VGS, ID=250A |
| Forward Transconductance (GFS) | 47 | S | VDS=5V, ID=15A |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | 1374 | pF | VGS=0V,VDS=15V, f=1MHz |
| Output Capacitance (Coss) | 165 | pF | VGS=0V,VDS=15V, f=1MHz |
| Reverse Transfer Capacitance (Crss) | 102 | pF | VGS=0V,VDS=15V, f=1MHz |
| Total Gate Charge (Qg) | 9.6 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate-Source Charge (Qgs) | 3.1 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate-Drain Charge (Qgd) | 3.3 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate Resistance (Rg) | 8 | f=1MHz | |
| Resistive Switch Characteristics | |||
| Turn-On Delay Time (td(on)) | 23 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-On Rise Time (tr) | 24 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-Off Delay Time (td(off)) | 185 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-Off Fall Time (tf) | 71 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (ISD) | 45 | A | Integral P-N diode in MOSFET |
| Maximum Pulsed Current (ISM) | 180 | A | Integral P-N diode in MOSFET |
| Diode Forward Voltage (VSD) | 1.2 | V | ISD=1A,VGS=0V |
| Reverse Recovery Time (trr) | 47 | ns | ISD=15A, dISD/dt=100A/S |
| Reverse Recovery Charge (Qrr) | 35 | nC | ISD=15A, dISD/dt=100A/S |
2410121606_ARK-micro-AKF30N10S_C3031427.pdf
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