power management solution featuring ASDsemi ASDM3401ZB R P channel MOSFET with low RDS ON resistance
Key Attributes
Model Number:
ASDM3401ZB-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
-
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
ASDM3401ZB-R
Package:
SOT-23-3L
Product Description
Product Overview
The ASDM3401ZB is a P-CHANNEL MOSFET from Ascend Semiconductor Co., Ltd., designed for PWM applications, load switching, and power management. It features a high-dense cell design for extremely low RDS(ON) and offers exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for various power management scenarios where efficient switching and low resistance are critical.Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Type: P-CHANNEL MOSFET
- Package Type: SOT-23-3L
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| General Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | A | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4A | 65 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3A | 75 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =-2.5V,ID=-1A | 100 | m | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1.5 | V | |
| Dynamic Characteristics (Note 2) | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 954 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz | 115 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 77 | pF | ||
| Switching Characteristics (Note 2) | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.3 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 3.2 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 38.2 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 12 | ns | ||
| Drain-source diode characteristics | ||||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-source Voltage | V DS | -30 | V | |||
| Drain Current | I D | -4.2 | A | |||
2409291808_ASDsemi-ASDM3401ZB-R_C2758234.pdf
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