Depletion mode power MOSFET ARK micro DMZ1520E with advanced planar technology and ESD improvements
Key Attributes
Model Number:
DMZ1520E
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
200mA
RDS(on):
15Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@8uA
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
-
Input Capacitance(Ciss):
12.8pF@10V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
3nC
Mfr. Part #:
DMZ1520E
Package:
SOT-23
Product Description
ARK Microelectronics DMZ1520E Depletion-Mode Power MOSFET
The DMZ1520E is a depletion-mode (normally-on) power MOSFET from ARK Microelectronics, featuring ESD improved capability and a proprietary advanced planar technology with a rugged polysilicon gate cell structure. It offers fast switching speeds and is RoHS compliant. This device is suitable for applications in new energy vehicles, industrial automation, surge protection, non-isolated linear power supplies, normally-on switches, linear amplifiers, and constant current sources.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: DMZ1520E
- Package: SOT-23
- Marking: 1520
- Certifications: RoHS Compliant, Halogen-free Available
- Origin: China (implied by company address)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 150 | V | TA=25 unless otherwise specified |
| Drain-to-Gate Voltage | VDGX | -- | -- | 150 | V | TA=25 unless otherwise specified |
| Continuous Drain Current | ID | -- | -- | 0.2 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 0.6 | A | [2] TA=25 unless otherwise specified |
| Power Dissipation | PD | -- | -- | 0.50 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | TA=25 unless otherwise specified |
| Gate to Source ESD | VESD | -- | 1500 | -- | V | [3] TA=25 unless otherwise specified |
| Source to Gate ESD | -- | -- | 1500 | -- | V | [3] TA=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ and TSTG | -55 | -- | 150 | -- | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | 250 | -- | K/W | -- |
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 150 | -- | -- | V | VGS=-10V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 10 | A | VDS=150VVGS=-10V |
| Drain-to-Source Leakage Current | -- | -- | -- | 1.0 | mA | VDS=150VVGS=-10V TJ=125 |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | uA | VGS=20V, VDS=0V |
| ON Characteristics | ||||||
| Saturated Drain-to-Source Current | IDSS | 200 | -- | -- | mA | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 10 | 15 | VGS=0V, ID=100mA[4] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.5 | -- | -5.5 | V | VDS=3V, ID=8A |
| Forward Transconductance | gfs | -- | 0.24 | -- | S | VDS=10V, ID=100mA |
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | -- | 12.8 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Output Capacitance | COSS | -- | 5.4 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | CRSS | -- | 3.3 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Total Gate Charge | QG | -- | 3 | -- | nC | VDS=75V, ID=200mA |
| Gate-to-Source Charge | QGS | -- | 0.23 | -- | nC | VDS=75V, ID=200mA |
| Gate-to-Drain (Miller) Charge | QGD | -- | 1.1 | -- | nC | VDS=75V, ID=200mA |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 7 | -- | ns | VGS=-10V~0V VDD=75V, ID=200mA RG=20Ohm |
| Rise Time | trise | -- | 16 | -- | ns | VGS=-10V~0V VDD=75V, ID=200mA RG=20Ohm |
| Turn-off Delay Time | td(off) | -- | 25 | -- | ns | VGS=-10V~0V VDD=75V, ID=200mA RG=20Ohm |
| Fall Time | tfall | -- | 120 | -- | ns | VGS=-10V~0V VDD=75V, ID=200mA RG=20Ohm |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=200mA, VGS=-10V |
2410121523_ARK-micro-DMZ1520E_C3031416.pdf
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