86--136 6733 2386
quality Low on resistance N-Channel MOSFET ASDsemi ASDM20N100Q-R 20V power device suitable for switching factory
quality Low on resistance N-Channel MOSFET ASDsemi ASDM20N100Q-R 20V power device suitable for switching factory

Low on resistance N-Channel MOSFET ASDsemi ASDM20N100Q-R 20V power device suitable for switching

Key Attributes
Model Number: ASDM20N100Q-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
325pF
Number:
1 N-channel
Output Capacitance(Coss):
2.47nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
6.384nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
ASDM20N100Q-R
Package:
DFN5x6-8
Product Description

Product Overview

The ASDM20N100Q is a 20V N-Channel Power MOSFET from Ascend Semiconductor Co., Ltd. This device features very low on-resistance (RDS(on)) and is designed for high-current applications. It is Pb-free and RoHS compliant, making it suitable for various industrial and electronic applications requiring efficient power switching.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Model: ASDM20N100Q
  • Technology: N-Channel MOSFET
  • Compliance: Pb-free lead plating, RoHS compliant
  • Package Type: DFN5x6-8
  • Date of Release: November 2018
  • Version: 1.0

Technical Specifications

Parameter Symbol Conditions Min Typ Max Units
STATIC PARAMETERS
Maximum Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±20 V
Drain-Source Breakdown Voltage BVDSS ID = 250uA, VGS = 0V 20 V
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA
Gate-Body leakage current IGSS VDS = 0V, VGS = ±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 2.0 2.5 V
Static Drain-Source On- Resistance RDS(ON) VGS=10V, ID=20A 1.3 1.7 mΩ
Static Drain-Source On- Resistance RDS(ON) VGS=4.5V, ID=20A 3.0 4.0 mΩ
Forward Transconductance gFS VDS=5V, ID=20A 70 S
Maximum Body-Diode Continuous Current IS VGS=0V, VDS=15V, f=1MHz 150 A
Diode Forward Voltage VSD IS=1A,VGS=245V 0.72 1 V
DYNAMIC PARAMETERS
Input Capacitance Ciss VGS=0V, VDS=0V, f=1MHz 6384 pF
Output Capacitance Coss VGS=0V, VDS=0V, f=1MHz 2470 pF
Reverse Transfer Capacitance Crss VGS=0V, VDS=0V, f=1MHz 325 pF
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 5.15 Ω
SWITCHING PARAMETERS
Turn-On DelayTime tD(on) VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 11 ns
Turn-On Rise Time tr VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 8.8 ns
Turn-Off DelayTime tD(off) VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 30.8 ns
Turn-Off Fall Time tf VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 9.9 ns
Total Gate Charge Qg (10V) VGS=10V, VDS=15V, ID=20A 25 nC
Total Gate Charge Qg (4.5V) VGS=4.5V, ID=20A 12.5 nC
Gate Source Charge Qgs VGS=4.5V, ID=20A 7.21 nC
Gate Drain Charge Qgd VGS=4.5V, ID=20A 10.3 nC
Body Diode Reverse Recovery Time trr IF=-8A, dI/dt=500A/µs 22 ns
Body Diode Reverse Recovery Charge Qrr IF=18A, dI/dt=500A/µs 58 nC
THERMAL CHARACTERISTICS
Maximum Junction-to-Ambient RθJA A t ≤ 10s 6 9 °C/W
Maximum Junction-to-Ambient RθJA Steady State 12 14 °C/W
Maximum Junction-to-Lead RθJL Steady State 3 5 °C/W
Power Dissipation PD TA=25°C 83 W
Power Dissipation PD TA=70°C 33* W
Continuous Drain Current ID TA=25°C 100 A
Continuous Drain Current ID TA=70°C 115 A
Pulsed Drain Current IDM TA=25°C 400 A
Avalanche Current IAR G 48 A
Repetitive avalanche energy EAR L=0.1mH G 110.4 mJ
Junction and Storage Temperature Range TJ, TSTG -55 150 °C
ORDERING AND MARKING INFORMATION
Device No. Package Marking Packing Quantity
ASDM20N100Q-R DFN5*6-8 20N100 4000/Reel

2410121606_ASDsemi-ASDM20N100Q-R_C2972884.pdf

Related Products
quality power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW factory
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.