Depletion Mode Power MOSFET ARK micro DMZ6012E with fast switching speed and ESD improved capability
Key Attributes
Model Number:
DMZ6012E
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
40mA
RDS(on):
150Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
62pF@5V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
8nC
Mfr. Part #:
DMZ6012E
Package:
SOT-23
Product Description
DMZ6012E Depletion-Mode Power MOSFET
The DMZ6012E is a depletion-mode (normally-on) power MOSFET from ARK Microelectronics, featuring ESD improved capability, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. It offers fast switching speeds and is RoHS compliant with a halogen-free option available. This MOSFET is suitable for applications such as normally-on switches, SMPS start-up circuits, linear amplifiers, converters, constant current sources, and telecom equipment.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: China (implied by company address)
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | -- | -- | V | VGS=-5V, ID=250A |
| Continuous Drain Current | ID | -- | -- | 0.04 | A | TA=25 |
| Pulsed Drain Current | IDM | -- | -- | 0.16 | A | TA=25 |
| Power Dissipation | PD | -- | -- | 0.50 | W | TA=25 |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | -- |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 110 | 150 | VGS=0VID=50mA [3] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -- | -1.5 | V | VDS =3V, ID=8A |
| Input Capacitance | CISS | -- | 62 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Oput Capacitance | COSS | -- | 13 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | CRSS | -- | 9 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Total Gate Charge | QG | -- | 8 | -- | nC | VGS=-5V~5V VDS=300V, ID=7mA |
| Turn-on Delay Time | td(ON) | -- | 10 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Rise Time | trise | -- | 22 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Turn-off Delay Time | td(OFF) | -- | 35 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Fall Time | tfall | -- | 210 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD =100 mA, VGS = -10 V |
2410121502_ARK-micro-DMZ6012E_C3031423.pdf
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