30V N Channel MOSFET ASDsemi ASDM30N150Q R with Low Gate Charge and High Pulsed Drain Current Rating
Key Attributes
Model Number:
ASDM30N150Q-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
2.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
718pF@15V
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
143nC@10V
Mfr. Part #:
ASDM30N150Q-R
Package:
DFN5x6-8
Product Description
Product Overview
The Ascend Semiconductor ASDM30N150Q is a 30V N-Channel MOSFET designed for high-performance applications. It features high ruggedness, low gate charge (typically 143nC), and improved dv/dt capability, with 100% avalanche testing for reliability. This MOSFET is suitable for synchronous rectification, Li-battery protection boards, and inverters.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: ASDM30N150Q
- Package Type: DFN5*6-8
- Technology: N-Channel MOSFET
Technical Specifications
| General Parameters | ||
|---|---|---|
| Model | ASDM30N150Q | |
| Voltage Rating (VDS) | 30 V | |
| Typical RDS(on) @ VGS=10V | 1.7 m | |
| Continuous Drain Current (ID) @ TC=25C | 150* A | |
| Continuous Drain Current (ID) @ TC=100C | 78* A | |
| Pulsed Drain Current (IDM) | 600 A | |
| Continuous Drain Current (ID) @ TA=25C | 30 A | |
| Continuous Drain Current (ID) @ TA=70C | 24 A | |
| Gate to Source Voltage (VGS) | 20 V | |
| Single Pulsed Avalanche Energy (EAS) | 576 mJ | |
| Repetitive Avalanche Energy (EAR) | 57 mJ | |
| Peak Diode Recovery dv/dt | 5 V/ns | |
| Total Power Dissipation (PD) @ TC=25C | 43 W | |
| Total Power Dissipation (PD) @ TA=25C | 2.6 W | |
| Operating Junction & Storage Temperature (TSTG, TJ) | -55 ~ +150 C | |
| Thermal Characteristics | ||
|---|---|---|
| Parameter | Value | Unit |
| Thermal Resistance, Junction to Case (Rthjc) | 1.8 | C/W |
| Thermal Resistance, Junction to Ambient (Rthja) | 62 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise specified) | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| BVDSS | Drain to source breakdown voltage | VGS=0V, ID=250uA | 30 | V | ||
| BVDSS / TJ | Breakdown voltage temperature coefficient | ID=250uA, referenced to 25C | 0.02 | V/C | ||
| IDSS | Drain to source leakage current | VDS=30V, VGS=0V | 1 | uA | ||
| VDS=24V, TJ=125C | 50 | uA | ||||
| IGSS | Gate to source leakage current, forward | VGS=20V, VDS=0V | 100 | nA | ||
| Gate to source leakage current, reverse | VGS=-20V, VDS=0V | -100 | nA | |||
| On Characteristics | ||||||
| VGS(TH) | Gate threshold voltage | VDS=VGS, ID=250uA | 1.2 | 2.4 | V | |
| RDS(ON) | Drain to source on state resistance | VGS=4.5V, ID=30A, TJ=25C | 3.4 | 4.5 | m | |
| VGS=10V, ID=30A, TJ=25C | 1.7 | 2.5 | m | |||
| Gfs | Forward transconductance | VDS=5V, ID=30A | 73 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input capacitance | VGS=0V, VDS=15V, f=1MHz | 6272 | pF | ||
| Coss | Output capacitance | 1022 | pF | |||
| Crss | Reverse transfer capacitance | 718 | pF | |||
| td(on) | Turn on delay time | VDS=15V, ID=30A, RG=4.7, VGS=10V | 20 | ns | ||
| tr | Rising time | 58 | ns | |||
| td(off) | Turn off delay time | 158 | ns | |||
| tf | Fall time | 77 | ns | |||
| Qg | Total gate charge | VDS=24V, VGS=10V, ID=30A, IG=5mA | 143 | nC | ||
| Qgs | Gate-source charge | 17 | nC | |||
| Qgd | Gate-drain charge | 43 | nC | |||
| Rg | Gate resistance | VDS=0V, Scan F mode | 4.2 | |||
| Source to Drain Diode Ratings Characteristics | ||||||
| IS | Continuous source current | Integral reverse p-n Junction diode in the MOSFET | 150 | A | ||
| ISM | Pulsed source current | 600 | A | |||
| VSD | Diode forward voltage drop | IS=45A, VGS=0V | 1.4 | V | ||
| trr | Reverse recovery time | IS=30A, VGS=0V, dIF/dt=100A/us | 26 | ns | ||
| Qrr | Reverse recovery charge | 10 | nC | |||
| Package Dimensions (DFN5*6-8) | |||
|---|---|---|---|
| Symbol | Min | Max | Unit |
| A | 0.85 | 1.00 | mm |
| A1 | 0.01 | 0.05 | mm |
| A2 | 0.69 | 0.75 | mm |
| b | 0.40 | 0.45 | mm |
| C | 0.20 | 0.30 | mm |
| D | 4.80 | 4.95 | mm |
| D1 | 3.91 | 4.06 | mm |
| D2 | 1.60 | 1.80 | mm |
| E | 5.65 | 5.80 | mm |
| E1 | 3.46 | 3.50 | mm |
| E2 | 0.80 | 0.95 | mm |
| L | 0.15 | 0.3 | mm |
| L1 | 0.08 | 0.15 | mm |
| L2 | 0.58 | 0.73 | mm |
| L3 | 0.45 | 0.60 | mm |
| H | 6.15 | 6.28 | mm |
| 8 | 12 | ||
| Ordering and Marking Information | ||||
|---|---|---|---|---|
| Package | Marking | Device No. | Packing | Quantity |
| DFN5*6-8 | 30N150 | ASDM30N150Q-R | Tape&Reel | 4000/Reel |
2410121617_ASDsemi-ASDM30N150Q-R_C2972857.pdf
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