100V N Channel Depletion Mode MOSFET ARK micro DMS42C10A Featuring Rugged Polysilicon Gate Cell Structure
Key Attributes
Model Number:
DMS42C10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
400mA
RDS(on):
3Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@8uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.7pF
Number:
1 N-channel
Output Capacitance(Coss):
29.4pF
Input Capacitance(Ciss):
91.4pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
2nC
Mfr. Part #:
DMS42C10A
Package:
SOT-223
Product Description
ARK Microelectronics DMX42C10A/DMS42C10A 100V N-Channel Depletion-Mode Power MOSFET
The ARK Microelectronics DMX42C10A/DMS42C10A is a 100V N-Channel Depletion-Mode Power MOSFET featuring a normally-on characteristic, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. It offers excellent temperature characteristics, fast switching speed, and higher reliability. This MOSFET is suitable for applications such as surge current suppression, automotive electronics, normally-on switches, linear amplifiers, and constant current sources.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Remark | VDSX (V) | ID (A) | PD (W) | RDS(ON) () | VGS(OFF) (V) |
|---|---|---|---|---|---|---|---|
| DMX42C10A | SOT-89 | Halogen Free | 100 | 0.4 | 1.0 | 3.0 (Max.) | -3.5 to -1.5 |
| DMS42C10A | SOT-223 | Halogen Free | 100 | 0.4 | 1.5 | 3.0 (Max.) | -3.5 to -1.5 |
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (BVDSX) | VGS=-5V, ID=250A | 100 | -- | -- | V |
| Drain-to-Source Leakage Current (ID(OFF)) | VDS=100V, VGS=-5V | -- | -- | 1 | A |
| Gate-to-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 1 | A |
| Saturated Drain-to-Source Current (IDSS) | VGS=0V, VDS=25V | 400 | -- | -- | mA |
| Static Drain-to-Source On-Resistance (RDS(ON)) | VGS=0V, ID=150mA | -- | -- | 3.0 | |
| Gate-to-Source Cut-off Voltage (VGS(OFF)) | VDS=3V, ID=8A | -3.5 | -- | -1.5 | V |
| Forward Transconductance (gfs) | VDS=20V, ID=150mA | -- | 0.46 | -- | S |
| Input Capacitance (Ciss) | VGS=-5V, VDS=25V, f=1.0MHz | -- | 91.4 | -- | pF |
| Output Capacitance (Coss) | VGS=-5V, VDS=25V, f=1.0MHz | -- | 29.4 | -- | pF |
| Reverse Transfer Capacitance (Crss) | VGS=-5V, VDS=25V, f=1.0MHz | -- | 5.7 | -- | pF |
| Total Gate Charge (Qg) | VGS=-5V~5V, VDS=45V, ID=150mA | -- | 2.0 | -- | nC |
| Gate-to-Source Charge (Qgs) | VGS=-5V~5V, VDS=45V, ID=150mA | -- | 0.52 | -- | nC |
| Gate-to-Drain (Miller) Charge (Qgd) | VGS=-5V~5V, VDS=45V, ID=150mA | -- | 0.48 | -- | nC |
| Turn-on Delay Time (td(on)) | VGS=-5V~5V, VDD=45V, ID=150mA, RG=10 | -- | 4.7 | -- | ns |
| Rise Time (trise) | VGS=-5V~5V, VDD=45V, ID=150mA, RG=10 | -- | 2.4 | -- | ns |
| Turn-off Delay Time (td(off)) | VGS=-5V~5V, VDD=45V, ID=150mA, RG=10 | -- | 12.8 | -- | ns |
| Fall Time (tfall) | VGS=-5V~5V, VDD=45V, ID=150mA, RG=10 | -- | 88 | -- | ns |
| Diode Forward Voltage (VSD) | ISD=150mA, VGS=-10V | -- | -- | 1.5 | V |
2410171116_ARK-micro-DMS42C10A_C41432010.pdf
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