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quality Low on resistance 40 volt n channel mosfet asdsemi asdm40n52e r with fast switching and dfn package factory
quality Low on resistance 40 volt n channel mosfet asdsemi asdm40n52e r with fast switching and dfn package factory

Low on resistance 40 volt n channel mosfet asdsemi asdm40n52e r with fast switching and dfn package

Key Attributes
Model Number: ASDM40N52E-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
-
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
980pF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ASDM40N52E-R
Package:
DFN-8(3.3x3.3)
Product Description

Product Overview

The ASDM40N52 is a 40V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It offers low on-resistance, fast switching speeds, and excellent package design for superior heat dissipation, making it suitable for demanding applications such as DC/DC converters and onboard power for servers, particularly in synchronous rectification. The device is 100% avalanche tested for enhanced reliability.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Product Type: N-Channel MOSFET
  • Package Type: DFN-3.3x3.3

Technical Specifications

Model VDSS (V) RDS(ON)-Typ (m) ID (A) Package Ordering Part Number Marking
ASDM40N52 40 4.2 52 DFN-3.3x3.3 ASDM40N52E-R 40N52
Symbol Parameter Condition Min. Typ. Max. Units
Absolute Maximum Ratings (TC=25 unless otherwise specified)
VDSS Drain-Source Voltage 40 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current TC = 25 52 A
ID Continuous Drain Current TC = 100 35 A
IDM Pulsed Drain Current note1 220 A
EAS Single Pulsed Avalanche Energy note2 100 mJ
PD Power Dissipation TC = 25 65 W
RJC Thermal Resistance, Junction to Case 1.92 /W
TJ, TSTG Operating and Storage Temperature Range -55 +150
Electrical Characteristics (TC=25C Unless Otherwise Noted)
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A 40 V
BVDSS Drain-Source Breakdown Voltage TJ=125C 30 V
IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V 1 A
IGSS Gate Leakage Current VGS=20V, VDS=0V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1 2.5 V
RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=30A 4.2 5.5 m
RDS(ON) Drain-Source On-state Resistance VGS=4.5V, IDS=20A 6.5 10 m
Diode Characteristics
VSD Diode Forward Voltage ISD=26A 1.2 V
trr Reverse Recovery Time ISD=26A, dlSD/dt=100A/s 14 ns
Qrr Reverse Recovery Charge ISD=26A, VGS=0V 32 nC
Dynamic Characteristics
Ciss Input Capacitance VDS=32V, VGS=10V, IDS=26A, Frequency=1.0MHz 980 pF
Coss Output Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz 160 pF
Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz 80 pF
td(ON) Turn-on Delay Time VDD=20V,IDS=26A, VGS=10V,RG=4.7 45 ns
tr Turn-on Rise Time VDD=20V,IDS=26A, VGS=10V,RG=4.7 1.6 ns
td(OFF) Turn-off Delay Time VDD=20V,IDS=26A, VGS=10V,RG=4.7 18 ns
tf Turn-off Fall Time VDD=20V,IDS=26A, VGS=10V,RG=4.7 2.5 ns
Gate Charge Characteristics
Qg Total Gate Charge VDS=32V, VGS=10V, IDS=26A 23 nC
Qgs Gate-Source Charge VDS=32V, VGS=10V, IDS=26A 5 nC
Qgd Gate-Drain Charge VDS=32V, VGS=10V, IDS=26A 2.5 nC

2410121738_ASDsemi-ASDM40N52E-R_C2758236.pdf

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